GAN HEMT TRANSISTOR RFMD Search Results

GAN HEMT TRANSISTOR RFMD Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

GAN HEMT TRANSISTOR RFMD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GaN ADS Abstract: GaN amplifier 120W transistor hemt RF393x Text: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,	Original	RF393x 900MHz 220mA) 220mA, RF3934 440mA) 900MHz) GaN ADS GaN amplifier 120W transistor hemt	PDF
GaN TRANSISTOR Abstract: RF3932 rf3931 RF3934 RF3933 RF393x transistor hemt Text: RFMD . Gallium Nitride High Power Transistors Introducing the development of RFMD’s GaN unmatched power transistor UPT family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5 µm GaN high electron mobility transistor (HEMT) semiconductor	Original	RF393x simple40 GaN TRANSISTOR RF3932 rf3931 RF3934 RF3933 transistor hemt	PDF
combiner THEORY Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318 Text: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective	Original	WP100318 combiner THEORY amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318	PDF
Gan hemt transistor RFMD Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933 Text: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz	Original		PDF
Gan hemt transistor RFMD Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934 Text: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron	Original	RF393x RF3933 RF3934 Gan hemt transistor RFMD RF3932 HIGH POWER TRANSISTOR Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934	PDF
Gan transistor Abstract: Gan hemt transistor transistor GaN Text: Technical Update RFMD GaN High-Power Transistors Gallium Nitride GaN High-Power Transistors Features: • High-Power Density of up to 4W/mm • Advanced 0.5µm GaN HEMT process • 28V bias operation • High Gain up to 16 dB • Internally matched • Advanced Heat Sink Package	Original		PDF
RF3930D Abstract: RF3930 Text: RF3930D 10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance RF IN VGQ Pin 1 CUT RF OUT VDQ Pin 2 • Output Power: 16W at P3dB	Original	RF3930D RF3930D DS110406 RF3930	PDF
Amplifier 10W bluetooth Abstract: DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector RF3930d 3930D SiC diode die Text: RF3930D 10W GaN on SiC Power Amplifier Die Package: Die Features • Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain = 19dB at 2GHz  48V Typical Performance  Output Power: 16W at P3dB  Drain Efficiency: 70% at P3dB	Original	RF3930D RF3930D DS130412 Amplifier 10W bluetooth DS1304 RFMD HEMT GaN SiC Gan hemt transistor RFMD ejector 3930D SiC diode die	PDF
Untitled Abstract: No abstract text available Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB	Original	RFHA1101D 10GHz 14GHz DS110630	PDF
thermocouple gaas Abstract: No abstract text available Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN	Original	RF3928280W RF3928 RF3928 DS110317 thermocouple gaas	PDF
GaN hemt Abstract: power transistor gan s-band air surveillance system diagram using radar Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar	PDF
ATC100B620 Abstract: L22 amplifier Gan hemt transistor RFMD Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD	PDF
ATC100B150JT Abstract: rfmd envelope tracking Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power>240W Advanced Heat Sink Technology RF IN	Original	RFG1M09180 700MHZ 1000MHZ RFG1M09180 RF400-2 865MHz 960MHz 47dBm ATC100B150JT rfmd envelope tracking	PDF
RFHA Abstract: RFHA1101 Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB	Original	RFHA1101 10GHz 14GHz RFHA1101 DS110719 RFHA	PDF

Untitled Abstract: No abstract text available Text: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to 2.2GHz  48V Operation Typical Performance	Original	RFG1M20090 RF400-2 44dBm -35dBc -55dBc RFG1M20090 DS130506	PDF
ATC100B100JT Abstract: RFMD PA LTE Text: RFG1M09090 700MHz to 1000MHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >120W  Advanced Heat-Sink Technology  Single Circuit for 865MHz to 960MHz  48V Operation Typical Performance	Original	RFG1M09090 700MHz 1000MHz RF400-2 865MHz 960MHz 44dBm -55dBc RFG1M09090 ATC100B100JT RFMD PA LTE	PDF
RFG1M09180 Abstract: ATC100B150JT Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology	Original	RFG1M09180 700MHZ 1000MHZ RFG1M09180 RF400-2 865MHz 960MHz 47dBm ATC100B150JT	PDF
Untitled Abstract: No abstract text available Text: RFHA1101 RFHA1101 4.3W GaN On SiC Power Amplifier Die-On-Carrier The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband	Original	RFHA1101 RFHA1101 36dBm DS131023	PDF
Untitled Abstract: No abstract text available Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB	Original	RFHA1101D 10GHz 14GHz DS110630	PDF
Untitled Abstract: No abstract text available Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB	Original	RFHA1101 10GHz 14GHz DS110630	PDF
bifet amplifier discrete schematic Abstract: ERJ8GEYJ100V thermocouple gaas Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance	Original	RF3934 RF3934 DS120202 bifet amplifier discrete schematic ERJ8GEYJ100V thermocouple gaas	PDF
Untitled Abstract: No abstract text available Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To	Original	RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm	PDF
Untitled Abstract: No abstract text available Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical	Original	RF3934 RF3934 DS120306	PDF
Untitled Abstract: No abstract text available Text: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB	Original	RFHA1101 10GHz 14GHz DS110719	PDF

GAN HEMT TRANSISTOR RFMD Search Results

GAN HEMT TRANSISTOR RFMD Result Highlights (5)

GAN HEMT TRANSISTOR RFMD Datasheets Context Search

GaN ADS

GaN TRANSISTOR

combiner THEORY

Gan hemt transistor RFMD

Gan hemt transistor RFMD

Gan transistor

RF3930D

Amplifier 10W bluetooth

Untitled

thermocouple gaas

GaN hemt

ATC100B620

ATC100B150JT

RFHA

Untitled

ATC100B100JT

RFG1M09180

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Untitled

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bifet amplifier discrete schematic

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