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    ATC100B150JT Price and Stock

    American Technical Ceramics Corp ATC100B150JT500XT

    CAPACITOR, CERAMIC, MULTILAYER, 500 V, 0.000015 uF, SURFACE MOUNT
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    Quest Components ATC100B150JT500XT 118
    • 1 $7.5
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    Chip-Germany GmbH ATC100B150JT500XT 218
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    Kyocera AVX Components 100B150JT1500XT

    Silicon RF Capacitors / Thin Film 15PF 1500V 5% 1111
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    TTI 100B150JT1500XT Reel 1,500 500
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    Kyocera AVX Components 100B150JTN500XC100

    Silicon RF Capacitors / Thin Film 15PF 500V 5% 1111
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    TTI 100B150JTN500XC100 WAFL 100
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    Kyocera AVX Components 100B150JT1500XC100

    Silicon RF Capacitors / Thin Film 15PF 1500V 5% 1111
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    TTI 100B150JT1500XC100 WAFL 100
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    • 100 $4.45
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    Kyocera AVX Components 100B150JT500XT

    Silicon RF Capacitors / Thin Film 500volts 15pF 5%
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    TTI 100B150JT500XT Reel 500
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    ATC100B150JT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    MCR50V107M8X11

    Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 MCR50V107M8X11 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3 CRCW120610R0FKTA

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1


    Original     		PDF MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NR1 MRF6S9060NBR1

    J365

    Abstract: TLC 3391 ATC100B150JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 J365 TLC 3391 ATC100B150JT500X

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6S9060N MRFE6S9060NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRFE6S9160H MRFE6S9160HR3 MRFE6S9160HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		PDF MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To


    Original     		PDF RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3

    mcr63

    Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 mcr63 T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HSR3 mcr63v477m

    Resistor mttf

    Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION


    Original     		PDF MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NBR1 Resistor mttf MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N

    A114

    Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 A114 AN1955 JESD22 MRF6S9160H MRF6S9160HSR3 atc100b220j

    TD-SCDMA

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 TD-SCDMA A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		PDF MRFE6VS25L MRFE6VS25LR5

    AN3263

    Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 AN3263 MRF6V4300N AN1955 MRF6V4300NBR1 C3225JB2A105KT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3

    LDMOS DVB-T transistors

    Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		PDF MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 LDMOS DVB-T transistors 470-860 CRCW120610RJ RF high POWER TRANSISTOR

    RF1000LF

    Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09180 RFG1M09180 180W GaN Power Amplifier 700MHz to 1000MHz The RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using


    Original     		PDF RFG1M09180 700MHz 1000MHz RFG1M09180 700MHz 1000MHz DS130823

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3