cf sot-363
Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-363
SCT-598
cf sot-363
GaAs FET cfy 14
GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343
cfy 14
121B
801C
SCT-595
CFY30
TSSOP-10-2
CFY 18
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GaAs pHEMT LOW SOT-343
Abstract: CLY 2
Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
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OT-363
VQFN-16-2
SCT-598
GaAs pHEMT LOW SOT-343
CLY 2
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nec 2571 4 pin
Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.
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MGF2415A
Abstract: MGF2415
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC
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MGF2415A
MGF2415A
MGF2415
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MGF1403B
Abstract: GaAs FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
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MGF1403B
MGF1403B
GaAs FET
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MGF1302
Abstract: gaas fet "GaAs FET" Low Noise Gaas
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET MITSUBISHI ELECTRIC
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MGF1302
MGF1302
gaas fet
"GaAs FET"
Low Noise Gaas
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MGF1402B
Abstract: MGF1402
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
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MGF1402B
MGF1402B
MGF1402
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GaAs MESFET
Abstract: mesfet
Text: Section 1 GaAs FETs and PHEMTs Table of Contents Surface Mount GaAs M E S F E T . 1-3 Low Noise GaAs MESFET Chip .
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OCR Scan
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AFM06P2-000)
AFM08P2-000)
GaAs MESFET
mesfet
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MGF1303B
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
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MGF1303B
MGF1303B
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MGF2430A
Abstract: MGF2430 gaAs FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2430A MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC
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MGF2430A
MGF2430A
MGF2430
gaAs FET
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band
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NEZ3642-4D,
NEZ4450-4D,
NEZ5964ter
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M 1661 S
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power
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MGFC2415A
MGFC2400
150mA
M 1661 S
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power
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OCR Scan
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MGFC2407A
MGFC2400
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Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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TGI8596-50
Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4
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MSE-2008
MSE-2009
TGI8596-50
TMD7185-2
TIM5359-60SL
TIM8996-30
X-band Gan Hemt
TGI1414-50L
TMD0305-2
tim5964-60sl
TIM5964-6UL
TIM5359-4UL
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GaAs MESFET
Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .
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DC-18
MA01801
GaAs MESFET
SPDT FETs
MMIC
ALPHA spdt Switch
GaAs MESFET amplifier
GHz Power FET
GaAs MMIC SPDT Switch
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NE6500278
Abstract: 10NEC 2410 nec
Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.
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NE6500278
NE6500278
NE6500278-E3
10NEC
2410 nec
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSIONS UNIT: mm DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7
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NES2527B-30
NES2527B-30
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.
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NE6500278
NE6500278
NE6500278-E3
10535E)
IR30-00-3
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NEC 2561
Abstract: 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec NE6501077 nec 0882 p 2 nec 2561 4 pin
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S 17.5 ±0.5
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NE6501077
NE6501077
NEC 2561
2561 nec
NEC semiconductor 2561
17-33 0952
2561 a nec
nec 0882 p 2
nec 2561 4 pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The PACKAGE DIMENSIONS UNIT: mm NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal
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NES2527B-30
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sn 0716
Abstract: NEC D 587
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1
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NE6500496
NE6500496
sn 0716
NEC D 587
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NES1417B-30
Abstract: nec 1441
Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3
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NES1417B-30
NES1417B-30
nec 1441
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2w, GaAs FET
Abstract: MGFK33V4045
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK33V4045 14.0 ~ 14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC
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MGFK33V4045
2w, GaAs FET
MGFK33V4045
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