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    onsemi NGTG30N60FWG

    IGBT TRENCH 600V 60A TO-247-3
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    Rochester Electronics LLC NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    DigiKey NGTG30N60FLWG Tube 143
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    onsemi NGTG30N60FLWG

    IGBT TRENCH FS 600V 60A TO-247-3
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    Rochester Electronics NGTG30N60FLWG 8,660 1
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    G30N60F Datasheets Context Search

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    NGTG30N60FLWG

    Abstract: G30N60FL G30N60F
    Text: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTG30N60FLWG 100able NGTG30N60FLW/D G30N60FL G30N60F PDF

    G30N60F

    Abstract: g30n60 NGTG30N60FWG
    Text: G30N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTG30N60FWG NGTG30N60FW/D G30N60F g30n60 PDF

    G30N60FL

    Abstract: No abstract text available
    Text: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTG30N60FLWG 100able NGTG30N60FLW/D G30N60FL PDF

    G30N60FL

    Abstract: No abstract text available
    Text: G30N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTG30N60FLWG NGTG30N60FLW/D G30N60FL PDF