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    AMD XC5VFX130T-2FFG1738C

    IC FPGA 840 I/O 1738FCBGA
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    DigiKey XC5VFX130T-2FFG1738C Tray 1
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    AMD XC5VLX110T-2FFG1738C

    IC FPGA 680 I/O 1738FCBGA
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    AMD XC5VFX200T-2FFG1738C

    IC FPGA 960 I/O 1738FCBGA
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    AMD XC5VLX220T-1FFG1738C

    IC FPGA 680 I/O 1738FCBGA
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    Mouser Electronics XC5VLX220T-1FFG1738C
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    AMD XC5VLX155T-1FFG1738C

    IC FPGA 680 I/O 1738FCBGA
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    DigiKey XC5VLX155T-1FFG1738C Tray 1
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    Avnet Americas XC5VLX155T-1FFG1738C Tray 12 Weeks 1
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    Mouser Electronics XC5VLX155T-1FFG1738C
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    G1738 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G1738 Hamamatsu Photonics GaAsP photodiode Original PDF

    G1738 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G1735

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. G1735 G1736 G1737 G1738


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 KGPD1003E02

    G1736

    Abstract: G1735 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsPフォトダイオード 拡散型 赤感度延長タイプ 特長 用途 l 低暗電流 l 高安定性 l 赤感度延長タイプ l 分析機器 l 色識別 • 一般定格／絶対最大定格 型名 G1735 G1736 G1737 G1738 G1740 G3297 外形


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 G1736 G1735 G1737 G1738 G1740 G3297

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735

    Hamamatsu G1735

    Abstract: G1735
    Text: GaAsP photodiodes Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. Dimensional outline/


    Original     		PDF G1735 G1736 G1737 G1738 G1740 KGPD1003E03 Hamamatsu G1735

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Type No. Dim ensional Outline (P.44-50)/ W indow Material Package Active Area Size Effective Active Area - (mm). (mm2) Spectral Response Range A (nm) Photo Sensitivity S Typ. (A/W ) , Peak Sensitivity Wavelength Ap : (nm)


    OCR Scan     		PDF G1116 G1117 G1120 G1737 KGPDB0004EA G1118, G3067, G1735, G1738j KSPDB0007EA

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)


    OCR Scan     		PDF Isc100 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G5645 G5842

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    Untitled

    Abstract: No abstract text available
    Text: .070 MULTILOCK Connectors Wire to Board Applications / Horizontal Mount Type Plug Mark I/M ark 11} Cap L 20 Part Number : □-175785- Pos. Mark I Part Number : 174952- Mark II Part Number : 176119-G (2.0 ' — 15 0 45. 9- - ^ j il il 0fl iHt .11L 16 S —


    OCR Scan     		PDF 176119-G G-173864-G 14pos. 173852-G 176117-G 174465-G 176114-G 10pos.

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


    OCR Scan     		PDF 0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    S3884

    Abstract: G1116
    Text: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc


    OCR Scan     		PDF 31-V0I5' G1115 G1116 G1120 G3067 G2711-01 G1735 G1736 Gf737 G1738 S3884

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE

    Untitled

    Abstract: No abstract text available
    Text: TH 1S DRAW 1NG IS UNPUBL 1SHED. 4 RELEASED FOR PUBLICATION BY TYCO ELECTRON ICS CORPORATION COPYR1GHT 20 20 LOC ALL RIGHTS RESERVED. DF D I ST A5 R E V I S I O N S P LTR C 13 5 8 . 0 o c r> O m l O CM o DESCR1P T 1ON DATE R E V I S E D PER E C O - 0 8 - 0 2 9 6 7 9


    OCR Scan     		PDF 23DEC2008 9MAY2004 M38999

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		PDF G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


    OCR Scan     		PDF 42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


    OCR Scan     		PDF Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


    OCR Scan     		PDF 100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015