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    Microchip Technology Inc LXMG1627-12-42

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    JRH Electronics G162740-1

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    Microchip Technology Inc LXMG1627-12-44

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    Microchip Technology Inc LXMG1627-05-41

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    Microchip Technology Inc LXMG1627-12-41

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    G1627 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hwson 6pin

    Abstract: PA2452
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF PA2452 G16272JJ1V0DS M8E02 hwson 6pin PA2452

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    PA1820

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF PA1858 PA1858 G16276JJ1V0DS

    PA1820

    Abstract: g1627
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1820 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1820 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and


    Original
    PDF PA1820 PA1820 g1627

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1809 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1809 is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and


    Original
    PDF PA1809 PA1809

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1858 P チャネル パワーMOS FET スイッチング用 µPA1858 は,2.5 V 電源系による直接駆動が可能なスイッチング 外形図(単位: mm)


    Original
    PDF PA1858 PA1858 PA1858GR-9JG G16276JJ1V0DS

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1809 N チャネル MOS FET スイッチング用 外形図(単位: mm) µPA1809 は,4.0 V 電源系による直接駆動が可能なスイッチング素子


    Original
    PDF PA1809 PA1809 PA1809GR-9JG G16273JJ1V0DS

    PA1820

    Abstract: PA1820GR9J
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF PA1820 PA1820 G16274JJ1V0DS PA1820GR9J

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    PA1820

    Abstract: No abstract text available
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1820 N チャネル MOS FET スイッチング用 外形図(単位: mm) µ PA1820 は,2.5 V 電源系による直接駆動が可能なスイッチング素子


    Original
    PDF PA1820 PA1820 PA1820GR-9JG G16274JJ1V0DS

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF PA1809 PA1809 G16273JJ1V0DS

    U6000

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


    Original
    PDF PA2452 PA2452 U6000

    PA1858

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1858 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1858 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and


    Original
    PDF PA1858 PA1858

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    6pin hwson

    Abstract: diode fr 210
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2452 N チャネル MOS FET スイッチング用 徴 5 3 4 ○2.5 V 駆動可能 ○低オン抵抗です。 RDS on 1 = 17.5 mΩ TYP.(VGS = 4.5 V, ID = 4.0 A)


    Original
    PDF PA2452 PA2452TL G16272JJ1V0DS M8E02 6pin hwson diode fr 210