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Hamamatsu Photonics G10899-003K |
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G10899 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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InGaAs PIN photodiode Wavelength .6 to 1.7Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending |
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G10899 SE-171 KIRD1109E01 InGaAs PIN photodiode Wavelength .6 to 1.7 | |
Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 m to 1.7 m. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 m to 1.7 m, the G10899 series has sensitivity extending |
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G10899 G10899-003K G10899-005K G1089: SE-171 KIRD1109E02 | |
Contextual Info: InGaAs PIN photodiodes G10899 series Wide spectral response range 0.5 to 1.7 m The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending |
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G10899 SE-171 KIRD1109E01 | |
G10899-003K
Abstract: G10899 InGaAs PIN photodiode Wavelength .6 to 1.7
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G10899 G10899-003K G10899-005K G10899: SE-171 KIRD1109E02 G10899-003K InGaAs PIN photodiode Wavelength .6 to 1.7 | |
G10899
Abstract: G10899-01K G10899-005K G10899-003K G10899-03K 003k 005-K G108990
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G10899 G108990 mG108990 1G10899 G10899-003K G10899-005K G10899-01K G10899-02K G10899-03K G10899 G10899-01K G10899-005K G10899-003K G10899-03K 003k 005-K | |
Contextual Info: Photosensor amplifier C8366 series Current-to-voltage conversion amplifier C8366: for high-speed Si PIN photodiode C8366-01: for high-speed InGaAs PIN photodiode Features Applications Wide band DC to 100 MHz Typ. (-3 dB; varies depending on the photodiode used) |
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C8366 C8366: C8366-01: C8366 B1201, KACC1067E06 | |
C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
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C10988MA C10627 D-82211 DE128228814 C9750 C10990 S11059-78HT S11154-01CT S10604 | |
Contextual Info: セレクションガイド 2014.12 赤外線検出素子 赤 外 域 の さま ざ ま な 感 度 波 長 範 囲 に 対 応 INFRARED DETECTOR 赤外線検出素子 赤外線検出素子は計測・分析・工業・通信・農業・医 学・理 化 学・天 文 学・宇 宙 などの 分 野に幅 広く利 用 |
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Contextual Info: フォトセンサアンプ C8366シリーズ 電流-電圧変換アンプ C8366: 高速Si PINフォトダイオード用 C8366-01: 高速InGaAs PINフォトダイオード用 特長 用途 広帯域 DC~100 MHz typ. (-3 dB, フォトダイオ-ドの性能に |
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C8366ã C8366: C8366-01: O-8/TO-5/TO-18ç AWG24) KACCC0755JA E2573 KACCA0334JA | |
Selection guideContextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high |
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KIRD0005E02 Selection guide | |
Contextual Info: セレクションガイド 2015.6 InGaAs フォトダイオード 低 ノイ ズ で 優 れ た 周 波 数 特 性 の 近 赤 外 線 検 出 素 子 InGaAs PHOTODIODE 当社独自の化合物半導体プロセス技術を生かしたInGaAsフォトダイオードは |
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Selection guide
Abstract: Infrared detectors P13243-011MA
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KIRD0001E08 Selection guide Infrared detectors P13243-011MA |