FULLY PROTECTED MESH OVERLAY MOSFET Search Results

P130NS04ZB

Abstract: P130NS0 STP130NS04ZB
Contextual Info: STP130NS04ZB STW130NS04ZB N-CHANNEL CLAMPED - 8mΩ - 80A TO-220/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STP130NS04ZB STW130NS04ZB • ■ ■ ■ VDSS RDS on ID CLAMPED CLAMPED < 0.009 Ω

P130NS04ZB

Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
Contextual Info: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A

ST T4 0560

Abstract: P130NS04ZB ST T4 0540 to-247 to-220 STB130NS04ZB STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB P130NS0
Contextual Info: STP130NS04ZB STB130NS04ZB - STW130NS04ZB N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET Figure 1: Package Table 1: General Features TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB • ■ ■ ■ VDSS RDS on ID CLAMPED

B130NS04ZB

Abstract: STB130NS04ZBT4 STP130NS04ZB P130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STW130NS04ZB P130NS0
Contextual Info: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A

Contextual Info: STP80NS04ZB N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STP80NS04ZB CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

P60NS

Abstract: P60NS04ZB P60NS04Z JESD97 STP60NS04ZB
Contextual Info: STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET General features Type VDSS RDS on ID STP60NS04ZB Clamped < 0.015Ω 60A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature

Contextual Info: STP62NS04Z N-CHANNEL CLAMPED 12mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET ADVANCED DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.014 Ω 40 A (*) TYPICAL RDS(on) = 0.012 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

Contextual Info: STP62NS04Z N-CHANNEL CLAMPED 11mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TARGET DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.014 Ω 40 A (*) TYPICAL RDS(on) = 0.011 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

P75NS04Z

Contextual Info: STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET General features Type VDSS RDS on ID STP75NS04Z Clamped < 11mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature

P62NS04Z

Abstract: TO-220Fully STP62NS04Z
Contextual Info: STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.015 Ω 62 A TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

STP80NS04ZB

Contextual Info: STP80NS04ZB N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STP80NS04ZB CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

P75ns04z

Abstract: STP75NS04Z JESD97
Contextual Info: STP75NS04Z N-channel Clamped - 7mΩ - 80A - TO-220 Fully protected MESH Overlay III Power MOSFET General features Type VDSS RDS on ID STP75NS04Z Clamped < 11mΩ 80A • Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature

P62NS04Z

Abstract: P62NS STP62NS04Z JESD97
Contextual Info: STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP62NS04Z Clamped <0.015Ω 62A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175° C maximum junction temperature

STP60NS04Z

Contextual Info: STP60NS04Z N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED <0.015 Ω 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

STP80NS04Z

Contextual Info: STP80NS04Z N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

P62NS04Z

Abstract: STP62NS04Z JESD97 mosfet 100A ST P62N
Contextual Info: STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP62NS04Z Clamped <0.015Ω 62A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175° C maximum junction temperature

p62ns04z

Abstract: STP62NS04Z
Contextual Info: STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET VDSS RDS on ID CLAMPED <0.015 Ω 62 A TYPE STP62NS04Z • ■ ■ ■ TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

Contextual Info: STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET VDSS RDS on ID CLAMPED <0.015 Ω 62 A TYPE STP62NS04Z • ■ ■ ■ TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

STP80NS04Z

Contextual Info: STP80NS04Z N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

Contextual Info: STP80NS04Z N - CHANNEL CLAMPED 7.5mG - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP 80N S04Z V dss R d S o ii Id CLAM PED <0.008 Q. 80 A . TYPICAL RDs(on) = 0.0075 £2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION

STP62NS04Z

Abstract: SC12470 p62ns04z st mosfet st 393 st marking code
Contextual Info: STP62NS04Z N-channel clamped 12.5 mΩ, 62 A, TO-220 fully protected MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID STP62NS04Z Clamped < 0.015 Ω 62 A 3 100% avalanche tested 1 ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature

STP60NS04Z

Abstract: TO-220Fully
Contextual Info: STP60NS04Z  N - CHANNEL CLAMPED 10mΩ - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60NS04Z • ■ ■ ■ V DSS R DS on CLAMPED <0.015 Ω ID 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE

Contextual Info: STP60NS04Z N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60NS04Z • ■ ■ ■ V DSS R DS on ID CLAMPED <0.015 Ω 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION

STP80NS04Z

Contextual Info: STP80NS04Z N-CHANNEL CLAMPED 7.5mΩ - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80NS04Z • ■ ■ ■ V DSS R DS on ID CLAMPED <0.008 Ω 80 A TYPICAL RDS(on) = 0.0075 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION