STP60NS04ZB Search Results

P60NS

Abstract: P60NS04ZB P60NS04Z JESD97 STP60NS04ZB
Contextual Info: STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET General features Type VDSS RDS on ID STP60NS04ZB Clamped < 0.015Ω 60A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature

Contextual Info: STP60NS04ZB N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60NS04ZB • ■ ■ ■ VDSS R DS on ID CLAMPED < 0.015 Ω 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE

STP60NS04ZB

Abstract: FULLY PROTECTED MESH OVERLAY MOSFET
Contextual Info: STP60NS04ZB N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60NS04ZB • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.015 Ω 60 A TYPICAL RDS(on) = 0.010 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE

STF12PF06

Abstract: STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z
Contextual Info: Power MOSFETs progress in power switching Selection guide May 2005 www.st.com/pmos MDmesh product range VDSS [V] RDS on (max) @ 10V [Ω] STE70NM50 500 0.05 190 190 70 ISOTOP 532 9.9 37 15 STY60NM50 500 0.05 190 190 60 Max247 532 9.9 37 15 STW45NM50FD 500