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    FUJITSU POWER AMPLIFIER GHZ Search Results

    FUJITSU POWER AMPLIFIER GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    FUJITSU POWER AMPLIFIER GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


    Original     		PDF IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500

    FMM5048GJ

    Abstract: No abstract text available
    Text: FMM5522GJ 3W FMM5048GJ (4W) New products Power Amplifier MMIC Models for 14 GHz-band VSAT FMM5522GJ(3W) / FMM5048GJ(4W) FUJITSU QUANTUM DEVICES LIMITED has developed a pair of power amplifiers (3W and 4W) for 14 GHz-band VSAT. The higher output, reduced size, and lower prices of these new models make


    Original     		PDF FMM5522GJ FMM5048GJ FMM5522GJ FMM5048GJ 14GHz-band FMM5522GJ) FMM5048GJ)

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
    Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original     		PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
    Text: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band


    Original     		PDF IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power

    584 MMIC

    Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
    Text: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5803X 30dBm FMM5803X FCSI0200M200 584 MMIC fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic

    0 281 002 924

    Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
    Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz FUJITSU SEMICONDUCTOR phemt

    fujitsu power amplifier GHz

    Abstract: UM 2200 power amplifier mmic
    Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz UM 2200 power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: No abstract text available
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz

    FUJITSU SEMICONDUCTOR phemt

    Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
    Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic

    fujitsu power amplifier GHz

    Abstract: power amplifier mmic
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology


    Original     		PDF FMM5802X FMM5802X FCSI0599M200 fujitsu power amplifier GHz power amplifier mmic

    ZE 004

    Abstract: FMM5052ZE SSOP-16
    Text: FMM5052ZE MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 2.7GHz • Medium Power: P1dB=26dBm Typ. @ f=0.8 - 2.7GHz • High Linear Gain: GL=19dB (Typ.) @ f=0.8 - 2.7GHz • Impedance Matched Zin/Zout = 50Ω • Wide Operating Temperature Range


    Original     		PDF FMM5052ZE 26dBm SSOP-16 FMM5052ZE ZE 004

    DC TO 20GHZ RF AMPLIFIER MMIC

    Abstract: fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ
    Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC


    Original     		PDF FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200 DC TO 20GHZ RF AMPLIFIER MMIC fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ

    FMM5057VF

    Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
    Text: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage


    Original     		PDF FMM5057VF FMM5057VF FCSI0202M200 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices

    Untitled

    Abstract: No abstract text available
    Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC


    Original     		PDF FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200

    FMM5056VF

    Abstract: 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12
    Text: FMM5056VF 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Low VSWR ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5056VF is a MMIC amplifier that contains a four-stage


    Original     		PDF FMM5056VF FMM5056VF FCSI0202M200 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12

    Untitled

    Abstract: No abstract text available
    Text: ASSP CMOS HIGH-POWER AMPLIFIER MB54503 • DESCRIPTION The Fujitsu MB54503 is a high-power amplifier which is used for mobile telecommunication systems such as handy phones and car phones. This device is ideally suitable for power amplifier driver. Using Fujitsu’s advanced technology, MB54503 achieves an Icc of 26.0mA typ. .


    OCR Scan     		PDF MB54503 MB54503 13dBm 14dBm 933MHz) 16-pin 374T75b FPT-16P-M05)

    Untitled

    Abstract: No abstract text available
    Text: FMM5017VF FUJITSU MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Q Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications


    OCR Scan     		PDF FMM5017VF 29dBm FMM5017VF 11V11

    cq 949

    Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
    Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz


    OCR Scan     		PDF FMM5802X FMM5802X FCSI0599M200 cq 949 fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23506-1E LOWNOISE AMPLIFIER 2 CIRCUITS MB54502 • DESCRIPTION The Fujitsu MB54502 includes two independent amplifiers which a r e l llill U o r mobile telecommunication applications such as handy phones and car phones. Both of the amplifiers achieve low current consumption as


    OCR Scan     		PDF DS04-23506-1E MB54502 MB54502 F9505

    fujitsu power amplifier GHz

    Abstract: fujitsu l band amplifier fujitsu rf power amplifier l band
    Text: FMM5021MU 1.5GHz MMIC Driver Amplifier DESCRIPTION The FMM5021MU is a MMIC driver amplifier with gain control that is designed for Personal Digital Cellular PDC applications in the 1,5GHz band. The driver amplifier includes three amplifier stages and a variable attenuator.


    OCR Scan     		PDF FMM5021MU FMM5021MU -60dBc 120mA FCSI0598M200 fujitsu power amplifier GHz fujitsu l band amplifier fujitsu rf power amplifier l band