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Text: MJE341 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)175 I(C) Max. (A)500m Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)300u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MJE341
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Text: 2SC3994 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.1k I(C) Max. (A)25 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3994
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Text: 2N6678+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N6678
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time600n
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Text: 2N6676+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N6676
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Text: B3604 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SK3297 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)12 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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SK3297
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Text: 2SD538 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SD538
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rca1A10
Abstract: No abstract text available
Text: RCA1A10 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)175 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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RCA1A10
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Text: 2N6678+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N6678
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time600n
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Text: 2SC3976 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)800 I(C) Max. (A)12 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)800 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)7
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2SC3976
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Text: 2SC3752 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.1k I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3752
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Text: RCA1A16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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RCA1A16
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Text: 2N6671+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N6671
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2N5415
Abstract: No abstract text available
Text: 2N5415+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N5415
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Text: SK3181 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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SK3181
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Text: 2SC3457 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.1k I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3457
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Text: SDT13201 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300ö V(BR)CBO (V)300 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC3184 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)500m Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3184
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Text: 2N6674+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N6674
Freq15M
time600n
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Text: BSP16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BSP16
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Text: 2N2812+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N2812
Freq15M
time150n
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Text: 2SC3982 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)10 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4
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2SC3982
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Abstract: No abstract text available
Text: 2N6673+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N6673
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time500n
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Text: 2N2812+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N2812
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time150n
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