Untitled
Abstract: No abstract text available
Text: 2N6482 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80º V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)67 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.300
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2N6482
Freq100M
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Untitled
Abstract: No abstract text available
Text: HEPS3012 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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HEPS3012
Freq100M
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Untitled
Abstract: No abstract text available
Text: MH0812 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MH0812
Freq100M
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Untitled
Abstract: No abstract text available
Text: 2N3327 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.
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2N3327
Freq100M
StyleStR-10
Code3-12
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2N6480
Abstract: No abstract text available
Text: 2N6480 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)50# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.20 h(FE) Max. Current gain.300
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2N6480
Freq100M
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transistor mpsu45
Abstract: MPS-U45
Text: MPS-U45 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40â V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.4.0k
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MPS-U45
Freq100M
transistor mpsu45
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Untitled
Abstract: No abstract text available
Text: PT2516 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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PT2516
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Untitled
Abstract: No abstract text available
Text: 2N5328 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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2N5328
Freq100M
StyleTO-210AA
Code3-12
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Untitled
Abstract: No abstract text available
Text: 2N2485 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)8.8# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.10 h(FE) Max. Current gain.
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2N2485
Freq100M
Code3-12
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Untitled
Abstract: No abstract text available
Text: PT2517 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)55 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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PT2517
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2SA968Y
Abstract: No abstract text available
Text: 2SA968Y Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA968Y
Freq100M
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Untitled
Abstract: No abstract text available
Text: MH0811 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MH0811
Freq100M
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Untitled
Abstract: No abstract text available
Text: 2N3297 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.6.0 h(FE) Max. Current gain.60
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2N3297
Freq100M
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Untitled
Abstract: No abstract text available
Text: 2SD2099 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.5 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition)
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2SD2099
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Untitled
Abstract: No abstract text available
Text: PT2045 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)65 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.
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PT2045
Freq100M
StyleTO-202
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Untitled
Abstract: No abstract text available
Text: BSS31 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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BSS31
Freq100M
StyleTO-39
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Untitled
Abstract: No abstract text available
Text: MPS6601 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.50 h(FE) Max. Current gain.500
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MPS6601
Freq100M
StyleTO-92
Code3-12
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Untitled
Abstract: No abstract text available
Text: THMPSA06 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)250m @I(C) (A) (Test Condition)100m
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THMPSA06
Freq100M
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Untitled
Abstract: No abstract text available
Text: KSC2715 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)35 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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KSC2715
Freq100M
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Untitled
Abstract: No abstract text available
Text: PET3703 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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PET3703
Freq100M
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Untitled
Abstract: No abstract text available
Text: BSP33T3 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BSP33T3
Freq100M
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Untitled
Abstract: No abstract text available
Text: BCW66EH Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCW66EH
Freq100M
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Untitled
Abstract: No abstract text available
Text: MPSA06S Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MPSA06S
Freq100M
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R w w w .fa irc h ild s e m i.c o m tm RC7144 133MHz Spread Spectrum Motherboard Integrated Clock/Buffer Description • Employs Fairchild’s proprietary Spread Spectrum Technology • Reduces measured EMI by as much as lOdB • Supports up to 150MHz
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RC7144
133MHz
150MHz
24MHz
48MHz
318MHz
RC7144
13x/zx
DS30005057
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