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    Infineon Technologies AG BSS316NH6327XTSA1

    MOSFET N-CH 30V 1.4A SOT23-3
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    DigiKey BSS316NH6327XTSA1 Cut Tape 561,352 1
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    BSS316NH6327XTSA1 Digi-Reel 561,352 1
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    BSS316NH6327XTSA1 Reel 558,000 3,000
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    BSS316NH6327XTSA1 Ammo Pack 14 Weeks, 2 Days 5
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    Mouser Electronics BSS316NH6327XTSA1 157,829
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    Infineon Technologies AG BSS314PEH6327XTSA1

    MOSFET P-CH 30V 1.5A SOT23-3
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    DigiKey BSS314PEH6327XTSA1 Digi-Reel 52,797 1
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    BSS314PEH6327XTSA1 Reel 51,000 3,000
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    Mouser Electronics BSS314PEH6327XTSA1 330,559
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    Infineon Technologies AG BSS315PH6327XTSA1

    MOSFET P-CH 30V 1.5A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSS315PH6327XTSA1 Digi-Reel 16,430 1
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    BSS315PH6327XTSA1 Cut Tape 16,430 1
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    BSS315PH6327XTSA1 Reel 15,000 3,000
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    BSS315PH6327XTSA1 Ammo Pack 16 Weeks, 3 Days 1
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    Mouser Electronics BSS315PH6327XTSA1 19,392
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    E-Switch Inc ULV4F2BSS311

    SWITCH PUSHBUTTON SPDT 3A 250V
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    DigiKey ULV4F2BSS311 Bulk 124 1
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    Mouser Electronics ULV4F2BSS311 186
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    E-Switch Inc ULV8FMBSS311

    SWITCH PB SPDT 3A 125V
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    DigiKey ULV8FMBSS311 Bulk 106 1
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    BSS31 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS31 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSS31 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSS31 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSS314PE Infineon Technologies P-Channel MOSFETs; Package: PG-SOT23-3; Package: SOT-23; VDS (max): -30.0 V; RDS (on) (max) (@10V): 140.0 mOhm; RDS (on) (max) (@4.5V): 230.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    BSS314PEH6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 1.5A SOT23 Original PDF
    BSS314PE H6327 TY Semiconductor MOSFET P-CH 30V 1.5A - SOT-23 Original PDF
    BSS314PEH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 1.5A SOT23 Original PDF
    BSS314PEL6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 1.5A SOT23 Original PDF
    BSS314PEL6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 1.5A SOT23 Original PDF
    BSS315P Infineon Technologies P-Channel MOSFETs; Package: PG-SOT23-3; Package: SOT-23; VDS (max): -30.0 V; RDS (on) (max) (@10V): 150.0 mOhm; RDS (on) (max) (@4.5V): 270.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    BSS315PH6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 1.5A SOT23 Original PDF
    BSS315P H6327 TY Semiconductor MOSFET P-CH 30V 1.5A - SOT-23 Original PDF
    BSS315PH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 1.5A SOT23 Original PDF
    BSS315PL6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 1.5A SOT-23 Original PDF
    BSS315PL6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 1.5A SOT-23 Original PDF
    BSS316N Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 30.0 V; RDS (on) (max) (@10V): 160.0 mOhm; RDS (on) (max) (@4.5V): 280.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    BSS316NH6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1.4A SOT23 Original PDF
    BSS316N H6327 TY Semiconductor MOSFET N-CH 30V 1.4A - SOT-23 Original PDF
    BSS316NH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 1.4A SOT23 Original PDF
    BSS316NL6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 1.4A SOT-23 Original PDF

    BSS31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H6327

    Abstract: No abstract text available
    Text: Product specification BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS316N PG-SOT23 IEC61249-2-21 H6327: H6327

    Untitled

    Abstract: No abstract text available
    Text: BSS315 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original
    PDF BSS315

    Untitled

    Abstract: No abstract text available
    Text: BSS31 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


    Original
    PDF BSS31 Freq100M StyleTO-39

    PG-SOT23

    Abstract: BSS316N JESD22-A114 L6327
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original
    PDF BSS316N PG-SOT23 L6327: PG-SOT23 BSS316N JESD22-A114 L6327

    BSS314PE

    Abstract: JESD22-A114 L6327
    Text: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101


    Original
    PDF BSS314PE PG-SOT-23 L6327: BSS314PE JESD22-A114 L6327

    BSS315

    Abstract: BSS315P JESD22-A114 L6327
    Text: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID •Logic level (4.5V rated) -1.5 • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101


    Original
    PDF BSS315P PG-SOT-23 L6327: BSS315 BSS315P JESD22-A114 L6327

    BSS316N

    Abstract: L6327 PG-SOT23
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original
    PDF BSS316N PG-SOT23 L6327: BSS316N L6327 PG-SOT23

    Untitled

    Abstract: No abstract text available
    Text: Product specification BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 -1.5 ID •Logic level (4.5V rated) • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101


    Original
    PDF BSS315P PG-SOT-23 AEC61249-2-21 PG-SOT23 H6327:

    BSS314

    Abstract: No abstract text available
    Text: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101


    Original
    PDF BSS314PE IEC61249-2-21 PG-SOT-23 PG-SOT23 H6327: BSS314

    H6327

    Abstract: marking YGs
    Text: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101


    Original
    PDF BSS314PE IEC61249-2-21 PG-SOT-23 PG-SOT23 H6327: H6327 marking YGs

    marking SYs

    Abstract: No abstract text available
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original
    PDF BSS316N IEC61249-2-21 PG-SOT23 H6327: marking SYs

    BSS315P

    Abstract: JESD22-A114 L6327
    Text: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID •Logic level (4.5V rated) -1.5 • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101


    Original
    PDF BSS315P PG-SOT-23 L6327: BSS315P JESD22-A114 L6327

    BSS314PE

    Abstract: JESD22-A114 L6327 c4125
    Text: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101


    Original
    PDF BSS314PE PG-SOT-23 L6327: BSS314PE JESD22-A114 L6327 c4125

    M15098

    Abstract: No abstract text available
    Text: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101


    Original
    PDF BSS314PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327: M15098

    Untitled

    Abstract: No abstract text available
    Text: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 -1.5 ID •Logic level (4.5V rated) A • Avalanche rated PG-SOT-23 • Qualified according to AEC Q101


    Original
    PDF BSS315P PG-SOT-23 AEC61249-2-21 PG-SOT23 H6327:

    BSS315P H6327

    Abstract: marking YCs BSS315P
    Text: BSS315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode 30 V V GS=10 V 150 mΩ V GS=4.5 V 270 -1.5 ID •Logic level (4.5V rated) • Avalanche rated A PG-SOT-23 • Qualified according to AEC Q101


    Original
    PDF BSS315P AEC61249-2-21 PG-SOT-23 PG-SOT23 H6327: BSS315P H6327 marking YCs BSS315P

    Untitled

    Abstract: No abstract text available
    Text: Product specification BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101


    Original
    PDF BSS314PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327:

    BSS316N

    Abstract: JESD22-A114 L6327 PG-SOT23
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


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    PDF BSS316N PG-SOT23 L6327: BSS316N JESD22-A114 L6327 PG-SOT23

    DIODE ED 34

    Abstract: No abstract text available
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


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    PDF BSS316N PG-SOT23 IEC61249-2-21 H6327: DIODE ED 34

    Untitled

    Abstract: No abstract text available
    Text: BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) -1.5 ID A • ESD protected PG-SOT-23 • Qualified according AEC Q101


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    PDF BSS314PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327: -200A/Â JESD22-A114

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    STR WG 253

    Abstract: PDCR 143
    Text: SSI 32P4742/4742A/4746/4746A Read Channel with 1,7 ENDEC, 4-burst Servo ¿ ik m s y s h t is A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 32P4742/4742A/4746/4746A devices are high performance BiCMOS single chip read channel


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    PDF 32P4742/4742A/4746/4746A 32P4742/4742A/4746/4746A 32P4742/4742A/4 001127b STR WG 253 PDCR 143

    BSS87

    Abstract: BSP315 SOT223 BSP171 BSS125
    Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317


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    PDF BSP17 BSP88 BSP89 BSP92 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSS87 BSP315 SOT223 BSS125

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29