FQU1N80TU Search Results
FQU1N80TU Price and Stock
FLIP ELECTRONICS FQU1N80TUMOSFET N-CH 800V 1A IPAK |
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FQU1N80TU | Tube | 3,772 |
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onsemi FQU1N80TUMOSFET N-CH 800V 1A IPAK |
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FQU1N80TU | Tube | 0 Weeks, 2 Days | 1,713 |
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FQU1N80TU | 539 | 1 |
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FQU1N80TU | 1 |
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FQU1N80TU | 143 Weeks | 5,040 |
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FQU1N80TU | 143 Weeks | 70 |
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FQU1N80TU | 3,772 |
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FAIRCHILD FQU1N80TUFQU1N80TU |
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FQU1N80TU | 983 | 602 |
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Fairchild Semiconductor Corporation FQU1N80TUPower Field-Effect Transistor, 1A, 800V, 20ohm, N-Channel, MOSFET, TO-251 |
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FQU1N80TU | 986 | 1 |
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FQU1N80TU Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FQU1N80TU |
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Power MOSFET | Original |
FQU1N80TU Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: QFET TM FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD1N80 FQU1N80 FQU1N80TU O-251 FQU1N80 | |
Contextual Info: FQD1N80 / FQU1N80 N-Channel QFET MOSFET 800 V, 1.0 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQD1N80 FQU1N80 |