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Untitled Abstract: No abstract text available Text: FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB22P10 FQI22P10 -100V, FQI22P10TU O-262	PDF

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Abstract: No abstract text available
Text: FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Original

FQB22P10 FQI22P10 -100V, FQI22P10TU O-262

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