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    FQB8N60CTM Price and Stock

    onsemi FQB8N60CTM

    MOSFET N-CH 600V 7.5A D2PAK
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    Verical FQB8N60CTM 117,600 3
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    Arrow Electronics FQB8N60CTM 117,600 1
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    FQB8N60CTM 5,600 99 Weeks 800
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    Newark FQB8N60CTM Reel 800
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    Rochester Electronics FQB8N60CTM 1
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    TME FQB8N60CTM 1
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    Avnet Silica FQB8N60CTM 143 Weeks 800
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    Flip Electronics FQB8N60CTM 131,600
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    onsemi FQB8N60CTM-WS

    MOSFET N-CH 600V 7.5A D2PAK
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    Fairchild Semiconductor Corporation FQB8N60CTM

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    Bristol Electronics FQB8N60CTM 470
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    Quest Components FQB8N60CTM 376
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    FQB8N60CTM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB8N60CTM Fairchild Semiconductor 600V N-Channel Advance Q-FET C-Series Original PDF
    FQB8N60CTM_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7.5A Original PDF
    FQB8N60CTM-WS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 7.5A Original PDF

    FQB8N60CTM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB8N60C / FQI8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Ω Description Features • 7.5 A, 600 V, RDS on = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		FQB8N60C FQI8N60C PDF

    8n60c

    Abstract: SVDF8N60c
    Text: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB8N60C FQI8N60C O-263 FQB8N60CTM 8n60c SVDF8N60c PDF