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    FP-32D PACKAGE Search Results

    FP-32D PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    FP-32D PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1Z16

    Abstract: SOP32 PRSP0032DC-A FP-32D D-3217 PSOP-32
    Text: JEITA Package Code P-SOP32-11.3x20.45-1.27 RENESAS Code PRSP0032DC-A *1 Previous Code FP-32D/FP-32DV MASS[Typ.] 1.3g NOTE 1. DIMENSIONS"*1 Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. F D 32 17 bp Index mark Terminal cross section


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    PDF P-SOP32-11 PRSP0032DC-A FP-32D/FP-32DV 1Z16 SOP32 PRSP0032DC-A FP-32D D-3217 PSOP-32

    Hitachi DSAUTAZ006

    Abstract: FP32D
    Text: HM62V8512C Series Package Dimensions HM62V8512CLFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05


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    PDF HM62V8512C HM62V8512CLFP FP-32D) FP-32D HM62V8512CLTT TTP-32D) TTP-32D HM62V8512CLRR Hitachi DSAUTAZ006 FP32D

    Hitachi DSAUTAZ005

    Abstract: ttp 021
    Text: HM62W8512B Series Package Dimensions HM62W8512BLFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05


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    PDF HM62W8512B HM62W8512BLFP FP-32D) FP-32D HM62W8512BLTT TTP-32D) TTP-32D HM62W8512BLRR Hitachi DSAUTAZ005 ttp 021

    FP-32D

    Abstract: FP32D FP-32D hitachi Hitachi DSAUTAZ005
    Text: HM628512BFP Series Package Dimensions HM628512BFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05


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    PDF HM628512BFP FP-32D) FP-32D FP32D FP-32D hitachi Hitachi DSAUTAZ005

    Hitachi DSAUTAZ005

    Abstract: No abstract text available
    Text: HM62V8512B Series Package Dimensions HM62V8512BLFP Series FP-32D Unit: mm 20.45 20.95 Max 17 11.30 32 1 1.27 *0.40 ± 0.08 0.38 ± 0.06 0.10 0.15 M *Dimension including the plating thickness Base material dimension 0.12 0.15 +– 0.10 1.00 Max *0.22 ± 0.05


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    PDF HM62V8512B HM62V8512BLFP FP-32D) FP-32D HM62V8512BLTT TTP-32D TTP-32D HM62V8512BLRR Hitachi DSAUTAZ005

    32 PIN

    Abstract: No abstract text available
    Text: HN58V1001 Series Ordering Information Type No. Access time Package HN58V1001P-25 250 ns 600 mil 32-pin plastic DIP DP-32 HN58V1001FP-25 250 ns 525 mil 32-pin plastic SOP (FP-32D) HN58V1001T-25 250 ns 8 x 14 mm 32-pin plastic TSOP (TFP-32DA) Pin Arrangement


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    PDF HN58V1001 HN58V1001P-25 HN58V1001FP-25 HN58V1001T-25 32-pin DP-32) FP-32D) TFP-32DA) 32 PIN

    2 mil res

    Abstract: 32 PIN
    Text: HN58C1001 Series Ordering Information Type No. Access time Package HN58C1001P-15 150 ns 600 mil 32-pin plastic DIP DP-32 HN58C1001FP-15 150 ns 525 mil 32-pin plastic SOP (FP-32D) HN58C1001T-15 150 ns 8 x 14 mm 32-pin plastic TSOP (TFP-32DA) Pin Arrangement


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    PDF HN58C1001 HN58C1001P-15 HN58C1001FP-15 HN58C1001T-15 32-pin DP-32) FP-32D) TFP-32DA) 2 mil res 32 PIN

    Untitled

    Abstract: No abstract text available
    Text: HN62328B Series Preliminary 8M 1M x 8-b tt M ask RO M • S1E O ESC B m O H » " ', ',< ,b S n 3 H ITA C H I/ ‘H” 7 7 5 " 378 ■ ■ Access Time 150 ns 200 ns 150ns 200 ns Package 32-pin Plastic DIP (DP-32) 32-lead Plastic SOP (FP-32D) PIN DESCRIPTION


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    PDF HN62328B 150ns 32-pin DP-32) 32-lead FP-32D) HN62328BP HN62328BF HN62328BP-15 HN62328BP-20

    LR4802

    Abstract: LR4087 alarm SL DIALER LR3441 Diode SY 356 lh5045 LR3463 LH5006A LR48232 LCD CHARACTER CODE LH5003
    Text: Product Lineup Product Lineup • Gate Arrays/Standard Cells 1 Gate Arrays P ro cess S eries LZ93 LZ95 CMOS F eatu re G ates High speed D esign rule Delay time Supply voltage O utput current V(TYP.) mA(MAX.) Page 300-5000 1.6 ,«m ns/gate * 1.7 5 4 41 300-10000


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    PDF 32kHz 22DIP LH5040 LH5041 LH5045 LH5047 LH5048 28DIP LR4802 LR4087 alarm SL DIALER LR3441 Diode SY 356 LR3463 LH5006A LR48232 LCD CHARACTER CODE LH5003

    transistor smd code marking 404

    Abstract: transistor smd code 404
    Text: BSS 119 In fin e o n technologies SIPMOS Small-Signal Transistor h • N channel i /V • Enhancement mode • ^ G S (th 2 = 1-6 .2.6 V 1 Pin 2 Pin 1 VqS BSS 119 100 V Type BSS 119 Ordering Code Q67000-S007 0.17 A Pin 3 D S G Type VPS05557 RDS(on) Package


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    PDF Q67000-S007 VPS05557 OT-23 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 transistor smd code marking 404 transistor smd code 404

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    Untitled

    Abstract: No abstract text available
    Text: HM628128B Series 131,072-word x 8-bit High speed CMOS Static RAM HITACHI ADE-203-243C Z Rev. 3.0 Aug. 10, 1996 Description The Hitachi HM628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS shrink process


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    PDF HM628128B 072-word ADE-203-243C

    58C1001

    Abstract: No abstract text available
    Text: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS


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    PDF HN58C1001 131072-word ADE-203-028F 128-byte 58C1001

    IR3N06

    Abstract: IR3N37 lr4087 IR3N05 IR3N71 LR4087B IR3N32 116dx LR48106
    Text: SPÉCIAL FUNCTIONICs ★ Under development Tone Dialers LR4087B/BN Complementary Single contact Bipolar NPN LR4089B/BN Matrix 0.5 1.0 2.5 to 6 1.0 N-ch. open drain 3.58 MHz Crystal 160IP/18MFP oscillator 16DIP/18MFP • Pulse/Tone Dialers M i l tie. .


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    PDF LR4087B/BN LR4089B/BN 16DIP/18MFP 160IP/18MFP 24DIP 18DIP/24SOP/ 20QFJ 28SDIP 28DIP/28SDIP 28DIP IR3N06 IR3N37 lr4087 IR3N05 IR3N71 LR4087B IR3N32 116dx LR48106

    hm658512ltt

    Abstract: No abstract text available
    Text: NEW PRODUCT HM658512 Series 524288-Word X 3-Bit High Speed Pseudo Static RAM Rev. 5 Sep. S, 1991 H ITA C H I - Pr e l i m i n a r y Features • Single 5 V + 10 Ï • High speed Access time ^CE access time . 80/100/120 ns Cycle time Random read/write cycle time.130/160/190 ns


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    PDF HM658512 524288-Word 32-pin HM658512DP hm658512ltt

    lh5359

    Abstract: e5bx
    Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.


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    PDF LH-532KXX LH532100BD/BN/BT/BS/BSR/BU 532048D 53V2P00A 532600D 532000B 532000BD LH-532C LH-5326XX lh5359 e5bx

    L295D

    Abstract: 3P92 LZ95G IR3P92 LZ23452 IR3P81 sharp LZ93N LR48106 LZ93N IR3P68
    Text: PRODUCT UNEUP SHARP PRODUCT LINEUP 1 /2 type CCD AREA SENSORs No.of pixels 270 k 320 k TV standard Model No. Color NTSC LZ2113Y B /W EIA LZ2114J Color PAL LZ2123Y B /W CCIR LZ2124J Electronic shutter s 1/6 0 to 1 /1 0 000 1 /5 0 to 1 /1 0 000 Resolution


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    PDF LZ2113Y LZ2114J LZ2123Y LZ2124J 512X582 LZ2335 LZ23352 LZ2336 LZ2345 LZ23452 L295D 3P92 LZ95G IR3P92 LZ23452 IR3P81 sharp LZ93N LR48106 LZ93N IR3P68

    74AHC

    Abstract: 74AHC32 74AHC32D 74AHC32PW 74AHCT32 74AHCT32D 74AHCT32PW
    Text: P hilips S em ico n d uctors P relim inary sp ecification Q uad 2-in pu t O R g ate 74A H C 32; 74A H C T 32 FEA TUR ES Q U IC K R E F E R E N C E DATA • O utput capability: standard GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • Ice category: SSI.


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    PDF 74AHC32; 74AHCT32 74AHC/AHCT32 74AHC 74AHC32 74AHC32D 74AHC32PW 74AHCT32 74AHCT32D 74AHCT32PW

    Untitled

    Abstract: No abstract text available
    Text: HM628128B Series 1 M SRAM 128-kword x 8-bit HITACHI ADE-203-243E (Z) Rev. 5.0 Nov. 1997 Description The H itachi HM 628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 Jim Hi-CMOS shrink process


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    PDF HM628128B 128-kword ADE-203-243E 628128B 072-word

    DS2311

    Abstract: No abstract text available
    Text: JUN li 1993 DS5311FP P R E L IM IN A R Y PALLAS DS5311FP 68HC11 Softener Chip s e m ic o n d u c to r FEATURES • Softens 68HC11 -based systems - Converts up to 64K bytes of CMOS RAM into lithium-backed NV program/data storage - Serial bootstrap loading - In-system program changes adapt HC11 to task


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    PDF DS5311FP 68HC11 03736C DS2311

    Untitled

    Abstract: No abstract text available
    Text: HM62W8128B-SR Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-598 Z Preliminary Rev. 0.0 Aug. 10, 1996 D escription The Hitachi HM62W 8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 ^m Hi-CMOS shrink process


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    PDF HM62W8128B-SR 072-word ADE-203-598 HM62W 8128B 525-mil 460-mil D-85622 W8128B-SR

    628128

    Abstract: No abstract text available
    Text: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series


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    PDF 131072-Word 628128P 6281eselect 628128

    Untitled

    Abstract: No abstract text available
    Text: HM62W8128B Series 131,072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-656A Z Rev. 1.0 Oct. 14, 1996 Description The Hitachi HM62W8128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.8 J i m Hi-CMOS shrink process


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    PDF HM62W8128B 072-word ADE-203-656A 525-mil 460-mil

    hn58v1001

    Abstract: No abstract text available
    Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS


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    PDF HN58V1001 128-kword ADE-203-314G 131072-word 128-byte HN58V1001R TFP-32DAR) FP-32D, TFP-32DA