FOR SECOND TEAR Search Results

FOR SECOND TEAR Result Highlights (5)

Part	Manufacturer	Description
GCM188D70E226ME36D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for Automotive
GRM022C71A472KE19L	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM033C81A224KE01W	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM155D70G475ME15D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM155R61J334KE01D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose

FOR SECOND TEAR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
29F020 Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface	OCR Scan	28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020	PDF
PPH 2222 36 Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface	OCR Scan	28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N	PDF
Contextual Info: in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 5 Second Typical ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Typical Chip-Program ■ Single High Voltage for Writing and Erasing	OCR Scan	1024K M28F010 ER-20, ER-24, 28F010 RR-60, AP-316,	PDF
intel 28F010 Abstract: N28F010-120 28F010 80C186 E28F010 Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for	OCR Scan	28F010 1024K AP-316, AP-325 from3000 28F010-65 28F010-90 4fl2bl75 intel 28F010 N28F010-120 28F010 80C186 E28F010	PDF
28F010 Abstract: M28F010 M28F010-12 M28F010-90 M80C186 Contextual Info: M28F010 1024K 128K x 8 CMOS FLASH MEMORY Y Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption	Original	M28F010 1024K M28F010 ER-20 ER-24 28F010 M28F010-12 M28F010-90 M80C186	PDF
Contextual Info: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller	OCR Scan	28F256A ER-20, ER-24, RR-60, AP-316, AP-325,	PDF
Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for	OCR Scan	28F020 2048K AP-325 -80V05, -80V05 28F020	PDF
intel 28f512 Abstract: 28F512 80C166 80C186 P28F512 Contextual Info: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ Command Register Architecture for	OCR Scan	28F512 intel 28f512 28F512 80C166 80C186 P28F512	PDF
N28F512-200 Abstract: P28F512-200 28F512-150 29020 28f512-200 Contextual Info: intei 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program	OCR Scan	28F512 28F512 P28F512-120 P28F512-150 P28F512-200 32-PIN 32-LEAD N28F512-120 N28F512-150 N28F512-200 N28F512-200 P28F512-200 28F512-150 29020 28f512-200	PDF
Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program	OCR Scan	28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325	PDF
Contextual Info: in te i A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to +125°C Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase	OCR Scan	A28F256A 32-Lead A28F256A AP28F256A-120 AP28F256A-150 AN28F256A-150 AP-316,	PDF
28F010-120 Abstract: 28f010 Contextual Info: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program	OCR Scan	28F010 1024K N28F010-120 TN28F010-120 N28F010-150 F28F010-120 F28F010-150 TE28F010-120 TF28F010-120 ER-20, 28F010-120	PDF
P28F256A-150 Abstract: F256A intel 28f256a Contextual Info: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Qulck-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program	OCR Scan	28F256A 32-LEAD P28F256A-120 P28F256A-150 F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, P28F256A-150 F256A intel 28f256a	PDF
Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for	OCR Scan	A28F010 1024K 32-LE AP28F010-150 AN28F010-150 ER-20, ER-24, 28F010 RR-60, AP-316,	PDF

tegra t30 Contextual Info: ¡n tg l 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 ¡j,s Typical Byte-Program	OCR Scan	1024K 28F010 AP-325 28F010-65 28F010-90 405bl tegra t30	PDF
28F256A200 Abstract: order 231369 29024 Contextual Info: « y « « in t e i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P ro g ra m m in g T M Algorithm	OCR Scan	28F256A 28F256A 32-PIN 32-LEAD N28F256A-120 N28F256A-150 N28F256A-200 P28F256A-120 P2BF256A-150 P28F256A-200 28F256A200 order 231369 29024	PDF
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program	OCR Scan	28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28,	PDF
271111 Contextual Info: in te i P ftiO M flN A H V M28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m in g Algorithm	OCR Scan	M28F010 1024K M28F010 271111	PDF
7805H Abstract: epson dot matrix printer TL7702ACP Contextual Info: Issued March 1999 232-3872 Data Pack F Panel printer Data Sheet RS stock no. 260-139 Specifications Standard Number of columns 24 Print speed lines per second - typical 0.7 Character set (mm) - W ϫ H 1.7 ϫ 2.4 Dots per line (graphics) 144 5 ϫ 7 (5 ϫ 8 for	Original	100mA 7805H epson dot matrix printer TL7702ACP	PDF
CRC16 Abstract: CRC-16 DS1920 DS1921 DS1971 DS1990 DS1991 DS2480B DS2482 DS2490 Contextual Info: Maxim > App Notes > 1-Wire Devices Keywords: iButton, 1-Wire, OneWire, 1wire, ultra-reliable, communication, techniques, touch, contact, intermittent, tear Sep 22, 2008 APPLICATION NOTE 159 Software Methods to Achieve Robust 1-Wire® Communication in iButton® Applications	Original	DS1993: DS1995: DS1996: com/an159 AN159, APP159, Appnote159, CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990 DS1991 DS2480B DS2482 DS2490	PDF
DS1991 Abstract: DS2480B DS2482 DS2490 CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990 Contextual Info: Maxim > App Notes > 1-Wire DEVICES Keywords: iButton, 1-Wire, OneWire, 1wire, ultra-reliable, communication, techniques, touch, contact, intermittent, tear Sep 22, 2008 Revised: Sep 22, 2008 APPLICATION NOTE 159 Software Methods to Achieve Robust 1-Wire® Communication in	Original	DS1973: DS1977: DS1982: DS1985: DS1986: DS1990A: DS1992: DS1993: DS1995: DS1996: DS1991 DS2480B DS2482 DS2490 CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990	PDF
Contextual Info: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R PROPERTY Color • Thermal conductivity: 1.5 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction	Original	1500R E1269	PDF
ASTM d792 Abstract: astm D150 conductivity meter circuit for second tear C351 D149 D150 D2240 D257 D374 Contextual Info: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R • Thermal conductivity = 1.5 W/mK • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction	Original	1500R D2240 ASTM d792 astm D150 conductivity meter circuit for second tear C351 D149 D150 D2240 D257 D374	PDF
Contextual Info: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R PROPERTY Color • Thermal conductivity: 1.5 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction	Original	1500R E1269	PDF

FOR SECOND TEAR Search Results

FOR SECOND TEAR Result Highlights (5)

FOR SECOND TEAR Datasheets Context Search

29F020

PPH 2222 36

intel 28F010

28F010

intel 28f512

N28F512-200

28F010-120

P28F256A-150

tegra t30

28F256A200

271111

7805H

CRC16

DS1991

ASTM d792