FMS2 Search Results

Contextual Info: Formosa MS SMD MOSFET FMS2305A List List. 1 Package outline. 2 Features. 2

DC-10

Abstract: DC-20 FMS2027 FMS2027-000 MIL-HDBK-263
Contextual Info: FMS2027 Preliminary Datasheet v2.2 DC–20 GHZ MMIC SPDT NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-Reflective design Low Insertion loss 2.2 dB at 20GHz typical Very high isolation 40 dB at 20GHz typical

FMS2020-001

Abstract: MIL-HDBK-263 GaN Bias 25 watt Rogers
Contextual Info: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process

FMS2027

Abstract: FMS2027-000 MIL-HDBK-263
Contextual Info: FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It

LFB215G78SG8A170

Abstract: 022-uF P0C3302 ML5805 P0S101 0.22UF R2381 P0C3301 P0C2202
Contextual Info: RSSI C1 AOUT P0C101P0C102 DOUT GND 31 S1 FMS2031-001 RFMD 27 C10 0.22uF P0C1002 P0C1001 C13 0.22uF P0C1302 P0C1301 C11 1.2pF P0C1401 P0C1402 VCC C12 2.0uF C14 1.2pF C27 1 2 P0S102 P0S103 3 E1 GND GND C30 GND 1.2pF GND C34 1.2pF 2.0 uF GND 220pF P0R701 P0C3901

FMS2001QFN

Contextual Info: FMS2001QFN Preliminary Data Sheet 2.2 SPDT Reflective pHEMT MMIC Switch Description The FMS2001QFN is a low loss linear Single-Pole Double-Throw Antenna Switch designed for use in mobile handset applications. The switch is designed with one antenna port that can be routed to any one of the two RF ports.

84-1 LMI

Abstract: 22-A114-B FMS2021
Contextual Info: FMS2021 Advanced Product Information 1.1 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Functional Schematic Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss <0.7 dB at 6GHz typical

PTA70

Abstract: 600402 FMS2701QSC tnand pn junction diode ideality factor
Contextual Info: www.fairchildsemi.com FMS2701 Temperature and Power Supply Voltage Monitor Description • • • • • • • • • The FMS2701 is a temperature- and voltage-monitoring device that can be interrogated and controlled through an SMBus serial interface. Outputs are an analog fan control

FAN2513

Contextual Info: www.fairchildsemi.com FAN2512, FAN2513 150 mA CMOS LDO Regulators with Fast Start Enable Features • • • • • • • • wide variety of external capacitors, and the compact SOT23-5 surface-mount package. In addition, the FMS2512/13 family offer the fast power-cycle time required in CDMA handset

Contextual Info: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process

rf mems switch using Power Handling

Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SP4T Switch HIGH POWER GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power

20Frequency

Contextual Info: FMS2029 Production Datasheet v4.0 DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.2 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive input and output in off-state Excellent low control voltage performance

Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features „ „ „ Optimum Technology Matching Applied ANT „ GaAs HBT GaAs MESFET DE SiGe BiCMOS Si BiCMOS Si CMOS

Contextual Info: FMS2014-001 Data Sheet 4.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at

Contextual Info: FMS2016-001 FMS2016-001 High Power GaAs SP4T Switch HIGH POWER GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power

FMS2016-001

Abstract: FMS2016-001-TB FMS2016-001-TR FMS2016QFN MIL-HDBK-263 sp4t switch die
Contextual Info: FMS2016-001 Datasheet v2.4 High Power Reflective GaAs SP4T Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: 3x3x0.9mm Packaged pHEMT Switch High isolation: >30dB at 1.8GHz Low Insertion loss: 0.65dB at 1.8GHz Excellent low control voltage performance

CW-37

Abstract: TX2 RX2 tx2/rx2 MIL-HDBK-263 FMS2032
Contextual Info: FMS2032 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >40dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz

nitrogen coupling

Abstract: FMS2034 MIL-HDBK-263
Contextual Info: FMS2034 Preliminary Datasheet v2.1 SP7T Ultra-linear GaAs WEDGE Antenna Switch FEATURES: PRODUCT DESCRIPTION: • World-class IMD performance: -122 dBm at 2.14GHz • 2 Tx, 4 Rx ports, 1 TRx WCDMA , • Low Tx insertion loss: 0.6 dB at 900 MHz, 0.8 dB at 1.8 GHz

Filtronic

Abstract: FMS2003QFN MIL-HDBK-263
Contextual Info: FMS2003QFN Preliminary Data Sheet 2.2 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Low cost QFN 12 lead 3*3 package Excellent low control voltage performance Excellent harmonic performance under

ESD 141

Abstract: FMS2022 B1142 capacitor 100pF 0603
Contextual Info: Preliminary Data Sheet FMS2022 2.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 ¨ ¨ ¨ ¨ ¨ Available as known good die Broadband performance Low Insertion loss <1.4 dB at 4 GHz typical High isolation >28 dB at 4 GHz typical

DC-20

Abstract: FMS2023 FMS2023-000-WP
Contextual Info: FMS2023 DC–20 GHZ MMIC LOW LOSS SPST ABSORPTIVE SWITCH FEATURES: • • • • • Pre-Production Datasheet v2.5 FUNCTIONAL SCHEMATIC: Low insertion loss: 1 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive output in off-state Excellent low control voltage performance

CW-37

Abstract: ag 1686 MIL-HDBK-263
Contextual Info: FMS2033 Flip Chip SP6T Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • • Advance Product Info v1.0 FUNCTIONAL SCHEMATIC: Available as RF Known Good Die Flip Chip enabled Very low Tx Insertion loss High Tx-Rx isolation >42dB typ. at 1.8GHz

DC-20

Abstract: FMS2027 FMS2027-000 MIL-HDBK-263
Contextual Info: FMS2027 Pre-Production Datasheet v3.0 DC–20 GHZ MMIC SPDT ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.1 dB at 20GHz High isolation: 42 dB at 20GHz Absorptive output in off-state Excellent low control voltage performance

UMS2N

Abstract: umw2n
Contextual Info: Transistors UMS2N / UMT2N / FMS2A / IMT2A / IMT3A UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 94S-366-A032 (96-427-C022) 595