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fmi16n60e Abstract: No abstract text available Text: FMI16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching	Original	PDF	FMI16N60E fmi16n60e
fmi16n60es Abstract: No abstract text available Text: FMI16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching	Original	PDF	FMI16N60ES fmi16n60es
16n60e Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE Text: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used	Original	PDF	FMI16N60E FMC16N60E FMB16N60E MS5F6842 MS5F68e H04-004-03 16n60e marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
FMV07N90E Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)	Original	PDF	O-220 O-220F FMH28N50ES FMH23N50ES FMH21N50ES FMH280E FMC06N80E FMI09N70E FMI07N70E FMC09N70E FMV07N90E fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Diode SMD SJ 94 Abstract: 16N60ES FUJI DATE CODE DIODE marking code SJ Text: Device Name DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor	Original	PDF	FMI16N60ES FMC16N60ES FMB16N60ES MS5F7247 H04-004-03 Diode SMD SJ 94 16N60ES FUJI DATE CODE DIODE marking code SJ
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	PDF	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28