FLM1011 Search Results
FLM1011 Price and Stock
SUMITOMO ELECTRIC Device Innovations Inc FLM1011-6F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FLM1011-6F | 7 |
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FLM1011 Datasheets (22)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FLM1011-12F | Eudyna Devices | X, Ku-Band Internally Matched FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-12F |
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FET, P Channel, ID 9 A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-15F | Eudyna Devices | X,Ku-Band Internally Matched FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-2 | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-2 | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-20F | Eudyna Devices | X,Ku-Band Internally Matched FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-3F | Eudyna Devices | FET Misc, X, Ku-Band Internally Matched FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-3F |
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FET, P Channel, ID 2.1 A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-4C | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-4C | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-4D | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-4D | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-4F | Eudyna Devices | X, Ku-Band Internally Matched FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-4F |
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FET, P Channel, ID 2.6 A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FLM1011-6F | Eudyna Devices | X, Ku-Band Internally Matched FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-6F |
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FET, P Channel, ID 4.2 A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-8C | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-8C | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-8D | Unknown | High Frequency Device Data Book (Japanese) | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM1011-8D | Unknown | FET Data Book | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FLM1011 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-6F -45dBc 25dBm FLM1011-6F | |
FLM1011-6FContextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-6F -45dBc 25dBm FLM1011-6F V4888 | |
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Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm Typ. • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 29% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 10.7 to 11.7GHz • Impedance Matched Zin/Zout = 50ohm |
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FLM1011-4F -46dBc 50ohm FLM1011-4F 25deg | |
FLM-10
Abstract: 223-28 FLM1011-12F
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FLM1011-12F -45dBc FLM1011-12F FCSI0598M200 FLM-10 223-28 | |
FLM1011-6FContextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200 | |
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Contextual Info: FLM1011-8C Internally Matched Power CiaAs I l l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol item Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w TotalPower Dissipation Tc = 25°C Pt Storage Temperature |
OCR Scan |
FLM1011-8C 2200mA 28dBm | |
fujitsu gaas fet
Abstract: FLM1011-3F
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FLM1011-3F -46dBc FLM1011-3F fujitsu gaas fet | |
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Contextual Info: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: hadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W |
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FLM1011-12F -45dBc FLM1011-12F FCSI0598M200 | |
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Contextual Info: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-12F -45dBc FLM1011-12F | |
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Contextual Info: FLM1011-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=31%(Typ.) ・Broad Band: 10.7~11.7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION |
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FLM1011-15F FLM1011-15F | |
37MT3Contextual Info: FLM1011-6F Fuffrsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 10.7 ~ 11.7GHz • Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM1011-6F -45dBc 25dBm FLM1011-6F 37MT3 | |
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Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-6F -45dBc 25dBm FLM1011-6F Vol88 | |
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Contextual Info: FLM1011-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)15 V(BR)GSS (V)-5 I(D) Max. (A)1.5 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.0 I(DSS) Max. (A)1.5 @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.600u |
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FLM1011-2 | |
FLM1011-4CContextual Info: FLM1011-4C RI lîrrQi I Internally Matched Power GaAs FETs r UJ11jU FEATURES • • • • • • High Output Power: P ^ b = 35.5dBm Typ. High Gain: = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM1011-4C UJ11jU FLM1011-4C | |
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FLM1011-8F
Abstract: FLM1011
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FLM1011-8F -46dBc FLM1011-8F FLM1011 | |
F2117
Abstract: ED-4701 FLM1011-15F FLM101115
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FLM1011-15F FLM1011-15F F2117 ED-4701 FLM101115 | |
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Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W |
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FLM1011-4F -46dBc FLM1011-4F FCSI0598M200 | |
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Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W |
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FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200 | |
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Contextual Info: FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W |
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FLM1011-8F -46dBc FLM1011-8F FCSI0598M200 | |
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Contextual Info: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-12F -45dBc FLM1011-12F Gate-Source88 | |
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Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200 | |
FLM1011-4FContextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω |
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FLM1011-4F -46dBc FLM1011-4F FCSI0598M200 | |
FLM1011-12F
Abstract: 3600mA
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OCR Scan |
FLM1011-12F -45dBc FLM1011-12F FCSI0598M200 3600mA | |
FLM1011-4CContextual Info: FLM1011-4C Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 25 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature |
OCR Scan |
FLM1011-4C FLM1011-4C | |