Untitled
Abstract: No abstract text available
Text: MbE D • Mfc,flb22b 0üüll7b 7 IX Y I X Y S CORP 'T 'Z S - Z J , C I I X Y S Thyristor Modules Thyristor/Diode Modules MCC26 Itav = 2 x 2 7 A MCD26 vRRM= 400-1600 V < 5< ? 1 i Type VMH VdAM V Version 1 Version 8 Version 8 500 700 900 1300 1500 1700 400 600
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flb22b
MCC26
MCD26
MCC26-06io1
MCC26-08lo1
MCC26-12lo1
MCC26-14
MCC26-16
MCC26-06
MCC26-08io8
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CHN 747
Abstract: oms 450 DIODE RK 306 CHN 450 E72873 MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220-14N1 rectifier bridge VU
Text: H71 B IIX Y 4t>flb22b 000171A n iX Y S Diode Modules MDD220 iTAV= 2 x 270 A VRRM = 600-1600 V Vmm V rm , Type V V Version 1 700 900 1300 1500 1700 600 600 1200 1400 1600 M D D 220-08N1 M D D 220-08N 1 M D D 220-12N 1 / z k S - M D D 220-16N1 Sym bol T e s t conditions
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4bflb52b
000171a
MDD220
MDD220-06N1
MDD220-08N1
MDD220-12N1
MDD220-14N1
MD0220-16N1
MDD220
CHN 747
oms 450
DIODE RK 306
CHN 450
E72873
MDD220-06N1
MDD220-08N1
MDD220-12N1
MDD220-14N1
rectifier bridge VU
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TO-238
Abstract: sn 8400
Text: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_
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1300C
IXFN100N10
O-238
O-238
TO-238
sn 8400
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Untitled
Abstract: No abstract text available
Text: □IXYS Three Phase Rectifier Bridges vFtSM vARM V V 1200 1400 1600 1800 1200 1400 1600 1800 VUO 55 IdAVM = 58 A vRRM = 1200-1800 V Type I I I - ÎÎ I VUÖ 55-12N07 VUO 55-14N07 VUO 55-16N07 VUO 55-18N07* N F I I . 1 delivery time on request Symbol Test Conditions
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55-12N07
55-14N07
55-16N07
55-18N07*
GDD3142
flb22b
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DSE12X30
Abstract: ixys dsei 2x30-12b ixys ml 075 ixys dsei dse12 DTV50 IXYS rectifiers fred 255
Text: DIXYS Fast Recovery Epitaxial Diodes FRED DSEI 2x30 ^FAVM DSEI 2x31 v RRM 2x28 A 1200 V 40 ns vt rsm V 1200 miniBLOC, SOT-227 B VRRW Type r V 1200 DSEI 2x30-12B DSEI2x31-12B - I i T ? P 0 1 i—« DSEI 2x31 DSEI 2x30 Maximum Ratings (per diode) Symbol Test Conditions
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2x30-12B
DSEI2x31-12B
OT-227
DSE12X30
ixys dsei 2x30-12b
ixys ml 075
ixys dsei
dse12
DTV50
IXYS rectifiers
fred 255
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Untitled
Abstract: No abstract text available
Text: a ix Y S P re lim in a ry D ata S heet IGBT with Diode IXSN 62N60U1 V CES IC25 Combi Pack ^ C E s a t = 600 V = 90 A = 2.5 V Short Circuit SOA Capability Symbol Test Conditions v CES ^ V CGR Maximum Ratings = 25 °C to 150°C 600 V T j = 25 °C to 150°C; RGE = 1 M£2
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62N60U1
OT-227
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Untitled
Abstract: No abstract text available
Text: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol
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67N10
75N10
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Untitled
Abstract: No abstract text available
Text: lüIXYS 1 Fast Recovery Epitaxial Diodes FRED DSEI 2x30 ^FAVM DSEI 2x31 vrRRM 2x28 A 1200 V 40 ns t v t rsm V rrm T y p e r - r V V 1200 1 2 0 0 DSEI 2x30-12B DSEI 2x31 -12B • - -4 - 5 miniBLOC, SOT-227 B n P DSEI 2x31 DSEI 2x30 Symbol Test Conditions
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2x30-12B
OT-227
G003D11
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Untitled
Abstract: No abstract text available
Text: nixYS HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = CES ^C25 vv CE sat t 600 V 48 A 2.7 V 275 ns P relim inary data Symbol Test Conditions vCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 600 V vt g e s vGEM Continuous ±20 V Transient
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24N60A
flb22b
24N60A
24N60AU1
D94006DE,
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IXGH20N60U1
Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package
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1750A
30KHz
T-39-15
IXGH10N60U1
IXGH10N60AU1
IXGH20N60U1
IXGH17N100AU1
SOT227B package
IXSH20N60U1
*GH20N60AU1
1XYS
UltraFast 5-40 kHz
E1S4
TI231
IGBT 20A 600V ABB
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B2HKF
Abstract: B6HKF VVZF 70 B6HK B2U 125
Text: □IXYS Power - P ack vwo 'VKD Ai 21 J : VYK UU i> : ì : i i: : VGO WF \£ D ETX VHF wz 3 2. ï :ïCi j. *• i s. ï :ï VTO Tentative data V RRM l„dav @TC ^FSM P < H o IXYS Type rT P Circuit thJC IhJK °c K/W K/W 150 150 150 125 125 125 125 125 150 150
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SAA 1041
Abstract: No abstract text available
Text: IXGB16N60R2 VCES IC25 Dual Independent IGBTs and Diodes in Power SIP V CE sat = 600 V = 16 A = 2.5 V Power SIP Advanced data Maximum Ratings Symbol Test Conditions vCES vCGR vGES vGEM Tj = 25°C to 150°C *C25 ^C60 u ^CM Tc = 25°C 16 Tc = 60°C 12 SSOA (RBSOA)
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IXGB16N60R2
4bflb22b
SAA 1041
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