FLASH 32 PIN PLCC 2MBIT Search Results

32-PIN

Abstract: TMS29F002RB TMS29F002RT
Contextual Info: TMS29F002RT, TMS29F002RB 262144 BY 8-BIT FLASH MEMORIES SMJS849B – MARCH 1997 – REVISED JUNE 1998 D D D D D D D D D D D FM PACKAGE 32-PIN PLCC TOP VIEW A12 A15 A16 RESET VCC WE A17 D D " Single Power Supply Supports 5-V 10% Read/Write Operation Organization : . . . 262 144 by 8 Bits

pin diagram of ic 6116

Abstract: pin DIAGRAM OF IC 7474 ACER LABORATORIES INC M8720 flash 32 Pin PLCC 2mbit IC 7474 pin configuration Acer Laboratories 7474 ic pin configuration EPROM 27020 acer
Contextual Info: Acer Laboratories Inc. -Proprietary, Confidential, Preliminary- Product Brief M8720 : 2Mbit 256Kx8 MTP Flash Memory M8720 : 2 Mbit (256Kx8) MTP Flash Memory (5 Program/Erase Cycles) Features General Description ! High performance 90ns read access time !

intel 80196 microcontroller

Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Contextual Info: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform

80186 programmer guide

Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Contextual Info: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform

diode A14A

Abstract: BIOS 32 Pin PLCC 845 bios chip PLCC 32 intel package dimensions amd 29f040 thermal resistance INTEL FLASH MEMORY DATA SHEET transistor ap 431 tsop 28-LEAD Footprints picture in picture chip psop 1
Contextual Info: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel's Boot Block Flash Memory CHARLES ANYIMI SENIOR TECHNICAL MARKETING ENGINEER December 1995 Order Number: 292178-002 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including

PLCC 32 intel package dimensions

Abstract: 845 bios chip intel 845 circuit diagram all chip TSOP 48 thermal resistance TSOP 48 LAYOUT ap623 am 28f040 AP-623 PCB Layout tsop 48 PIN SOCKET
Contextual Info: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel’s Boot Block Flash Memory December 1996 Order Number: 292178-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

block diagram for automatic room power control

Abstract: 29LV002 PM1204
Contextual Info: MX29LV002C/002NC T/B 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 262,411 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 70/90ns

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29F002T

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

MX29F002BQC-70G

Abstract: 29F002T
Contextual Info: MX29F002/002N T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

eproms

Contextual Info: Features • Fast read access time – 55ns • Low-power CMOS operation • • • • • • • • • – 100µA max standby – 40mA max active at 5MHz JEDEC standard packages – 40-lead PDIP – 44-lead PLCC Direct upgrade from 512Kbit, 1Mbit, and 2Mbit

Contextual Info: Features • Fast read access time – 55ns • Low-power CMOS operation • • • • • • • • • – 100µA max standby – 40mA max active at 5MHz JEDEC standard packages – 40-lead PDIP – 44-lead PLCC Direct upgrade from 512Kbit, 1Mbit, and 2Mbit

Contextual Info: MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

32345

Abstract: PSD913F2-90MI intel 80196 Introduction definitions HATTELAND 683XX 68HC11 68HC12 68HC16 DK900 80C31
Contextual Info: PSD9XX Family Product Brief PSD913F2 PSD934F2 Configurable Memory System on a Chip for 8-Bit Microcontrollers January, 2000 Preliminary 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-8495 800-TEAM-WSI 800-832-6974 Web Site: http://www.waferscale.com

80186 programmer guide

Abstract: 5995 8051xa Datasheet PSD934F2-90JI PSD913F2-90MI transistor 0882 Z80 INTERFACING TECHNIQUES intel 80196 Introduction definitions C 5763 transistor HATTELAND
Contextual Info: PSD9XX Family Product Brief PSD913F2 PSD934F2 Configurable Memory System on a Chip for 8-Bit Microcontrollers January, 2000 Preliminary 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-8495 800-TEAM-WSI 800-832-6974 Web Site: http://www.waferscale.com

MX29F022T

Contextual Info: MX29F022/022N 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply • -30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

Contextual Info: 2 Mbit / 4 Mbit Firmware Hub SST49LF002A / SST49LF004A Advance Information FEATURES: • Firmware Hub for Intel 810, 810E, 820, 840 Chipsets • 2Mbits or 4Mbits SuperFlash memory array for code/data storage – SST49LF002A: 256K x8 2 Mbit – SST49LF004A: 512K x8 (4 Mbit)

Contextual Info: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

MX29F022T

Contextual Info: MX29F022/022NT/B 2M-BIT[256K x 8]CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption • • • • • Status Reply - 30mA maximum active current - 1uA typical standby current@5MHz Programming and erasing voltage 5V±10%

29F002T

Abstract: 29F002
Contextual Info: ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current 5MHz - 1uA typical standby current Programming and erasing voltage 5V ± 10%

29212* intel

Contextual Info: in te i, A P ' 3 8 0 APPLICATION NOTE Upgrading System Designs from Bulk Erase to Boot Block Flash Memories BRIAN DIPERT SENIOR TECHNICAL MARKETING ENGINEER October 1993 I Order Number: 292129-001 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors

Contextual Info: INDEX NEW ADVANCED INFORMATION MX29F002/ MX29F002N 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 70/90/120ns • Low power consumption – 30mA maximum active current – 1µA typical standby current • Programming and erasing voltage 5V ± 10%

MX29F002NPC-12

Abstract: 29F002T
Contextual Info: INDEX ADVANCED INFORMATION MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • • • • • 262,144x 8 only Fast access time: 70/90/120ns Low power consumption - 30mA maximum active current - 1µA typical standby current Programming and erasing voltage 5V ± 10%