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    MGFK35V4045-01

    Abstract: No abstract text available
    Text: A m it s u b is h i M G FK37V XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The FK37VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P-idB = 5.5W (TYP)


    OCR Scan     		PDF FK37V MGFK37VXXXX MGFK35V4045-01 MGFK35V4045-51

    GFK37V404S

    Abstract: K37V4045
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FK37V404S 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF GFK37V404S GFK37V404S K37V4045