FJL DIODE Search Results

P6KEI5A

Abstract: p6kei5a diode P6KEI2A p6ke9ia p6ke68a P6KEI6 PSKEl60A P6KE10 P6KE10A P6KE11
Contextual Info: FAGOR ELECTRONICS r ^ D E | 3 4 S 1 3 a 5 DODDOat D I ” 0 T ^ FAGOR " Transient suppressor diodes* ' The plastic material carries U/L recognition 94V-0. . P6KE Series. 600 ‘V fJl ms. expo. Plastic Case: DO-16. Outline: 2 Type Unidirectional P6KE7.5 P6KE7.5A

Contextual Info: 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S10VTD/S10VTAD 800V 10A U n it • m m i&fiUAiOo <*[& *>]- Kîîëfdlmaxx*1.6 ?+o f S10VTA type has solid w ire lead terminals. ( l l MAXX fJl,6) • RATING S A b so lu te Maximum R a tin g s

ATIC 39 b4

Contextual Info: KeyCoder UR5HCFJL USAR product sp ecificatio ns Self Power Management Laptop/Notebook Keyboard Encoder GreenCoder™ UR5HCFJL Description Features The UR5HCFJL G reenC oder ™ is a unique, q uasi-zero pow er keyboard e ncod er that provides an optim um

Contextual Info: mm Axial Diode Single Diode • O U T L IN E D IM E N S IO N S D1ND 600V 1A ■ R A T IN G S A bsolute Maximum R atings m @ !£ - § Symbol Item U W & fS . O perating J u n c tio n Tem perature Average Rectified Forward Current - t ir / u S I - t f " vH H U SSrt

Contextual Info: BAV99W DUAL SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Ultra-small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 Dim Min Max A 0.30 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 G 1.20 1.40

VTE5880

Contextual Info: 5bE D • 3D30bDT Daoigsa 431 M V C T GaAIAs Infrared Emitting Diodes VTE5880 T-1 3/4 5 mm Plastic Package — 880 nm T - 4 I - 15 VACTEC _ PACKAGE DIMENSIONS inch (mm) ■OSO (1 2 7 ) .0 3 0 (0 7 $ ) 1 0 0 ( 2 5 .4 ) MINIMUM ' .3 4 ( 8 .6 ) .1 7 ( 4 .3 )

Contextual Info: BAV99W DUAL SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Ultra-small Surface Mount Package SOT-323 For General Purpose Switching Applications High Conductance Dim Min Max A 0.30 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal -H : h - A X ft I ft

BF982

Abstract: Transistor BF982
Contextual Info: BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fie ld -e ffe ct transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r V H F applications, such as VHF television tuners, FM tuners, w ith 12 V supply voltage. This MOS-FET te tro de is protected against excessive in p u t voltage surge« b y integrated back-to-back

LD-701

Contextual Info: Light Emitting Diodes Large flat displays LD-701 Series The LD-701 series w ere designed in •E x te rn a l dimensions Unit: mm response to the n eed for large, flat displays. These are th ree -ch ip , flat displays with high luminance. •F e a tu re s

diode ITT

Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Contextual Info: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark

ITT DIODE 125

Abstract: ITT diode 103A 400D LL103A LL103B LL103C SD103A LL103
Contextual Info: ITT SEniCOND/ INTERNETALL LIE » • 4b62711 0003500 TÔÔ M I S I LL103A . . . LL103C Mark - 3.5*0.!-^ /CIathode 10 o♦1 -Lf> 2 3 0.3±01 Silicon Schottky Barrier Diodes for general purpose applications The LL103A, B, C is a metal on silicon Schottky barrier device

Contextual Info: HN1D01FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr = 1.6ns (Typ.) Small Total Capacitance

1N5401

Abstract: 1N5401+equivalent
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS IN TER N ATIO N A L DE|4flS5452 O O C m Q ì 55C R E C T IF IE R 4 | 04909 D Data Sheet No. PD-2.083 àt-tsr INTERNATIONAL RECTIFIER IÖR 1N54Ü1 SERIES 3 Amp Medium Power Silicon Rectifier Diodes Major Ratings and Characteristics

CQX15

Abstract: CQX17 ST1331 ST1274
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES • Good optical to mechanical alignment SYM B O L IN C H E S MIN. A M ILLIM ETERS MAX. MIN.

TIP 40c transistor

Abstract: TIP 133 transistor transistor TIP 320 QPD1223 transistor 813 Lf transistor tip 25c transistor tip 40c
Contextual Info: En PLASTIC T-1% PAIR OPTOELECTRONICS QPD1223 PACKAGE DIMENSIONS .205 5.21 .185 (4.70) .205 (5.21) .185 (4.70) R EFEREN CE SU RFACE R EFEREN CE SU RFACE .800 (20.3) MIN C O L LE C T O R -.1 0 0 (2.54) NOM .025 (.640) .015 (.380) S Q NOM 2 PLCS .015 (.380)

SB30-03P

Abstract: marking sg n3868
Contextual Info: O rd e rin g n u m b e r :EN 3868 SANYO SB30-03P No.3868 Silicon Epitaxial Schottky Barrier Diode i 30V, 3A Rectifier A pplications • High frequency rectification switching regulators, converters, choppers . F eatu res • Low forward voltage (Vp max = 0.55V).

facon diode

Abstract: facon CB-283 703 H 8 amp diode Facon Semiconducteurs CL20-600 3MSb2G3 CL44-703
Contextual Info: FACON 45E J> m 3MSb2G3 OOOODSM □ • FCN FACON SEMICONDUCTEURS/SEMICOPJEHJCTORS OI -o I mouldings m o u lag es VRRM Types V RMS re c o m ­ m ended m ax V (V ) ■d on re ­ s is tiv e lo a d s u r c h a rg e r é s is tiv e *d s m / *fsm I r p e r d io d e

DFLZ33

Abstract: zener diode 6.2v 1w DFLZ5V6 DFLZ10
Contextual Info: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ5V1 - DFLZ33 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features • · · 1W Power Dissipation on FR-4 PCB

a1p diode

Abstract: BAW62 SOT23 7Z65148 BAW56 BAW62 12p sot-23 a1p sot
Contextual Info: 7110Ä5b DDbß3S7 17T M P H I N BAW56 7 V. SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of two diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

ERG75

Abstract: T151 T760 T810 A23G
Contextual Info: ERG75 45A : Outline Drawings FAST RECOVERY DIODE Features • t — Pl aner chip • Soft recovery type • Stud mounted : Applications • Switching power supplies • 'f-av't— Free-wheel diode • Others. M axim um Ratings and Characteristics '• Absolute Maximum Ratings

zener diode 6.2v 1w

Abstract: DFLZ6V2 DFLZ10 DFLZ27 cu marking code zener DFLZ36 DFLZ5V1 DFLZ11 DFLZ5V6 DFLZ13
Contextual Info: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features

BK 300 MI

Abstract: WTVA KO-48 ESAC63-004 H125
Contextual Info: ESAC63-004 2 oa i'a y h ï- 'O J T m — K SC H O T T K Y B A R R IER DIODE m n & : Features • f&vF Low Vp Super high speed switching. m m & n Connection Diagram High reliability by planer design, : Applications High speed power switching. M aximum Ratings and Characteristics

DFLZ10

Abstract: DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24
Contextual Info: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features

Contextual Info: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics