P6KEI5A
Abstract: p6kei5a diode P6KEI2A p6ke9ia p6ke68a P6KEI6 PSKEl60A P6KE10 P6KE10A P6KE11
Text: FAGOR ELECTRONICS r ^ D E | 3 4 S 1 3 a 5 DODDOat D I ” 0 T ^ FAGOR " Transient suppressor diodes* ' The plastic material carries U/L recognition 94V-0. . P6KE Series. 600 ‘V fJl ms. expo. Plastic Case: DO-16. Outline: 2 Type Unidirectional P6KE7.5 P6KE7.5A
|
OCR Scan
|
34S1325
DO-16.
P6KE10
P6KE10A
P6KE120A
P6KE130
P6KE130A
P6KE150
P6KE150A
P6KE160
P6KEI5A
p6kei5a diode
P6KEI2A
p6ke9ia
p6ke68a
P6KEI6
PSKEl60A
P6KE11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S10VTD/S10VTAD 800V 10A U n it • m m i&fiUAiOo <*[& *>]- Kîîëfdlmaxx*1.6 ?+o f S10VTA type has solid w ire lead terminals. ( l l MAXX fJl,6) • RATING S A b so lu te Maximum R a tin g s
|
OCR Scan
|
S10VTD/S10VTAD
S10VTA
S10VT60,
S10VT80,
S10VTA80
S10VTA60
S10VT80
SI0VT60
|
PDF
|
ATIC 39 b4
Abstract: No abstract text available
Text: KeyCoder UR5HCFJL USAR product sp ecificatio ns Self Power Management Laptop/Notebook Keyboard Encoder GreenCoder™ UR5HCFJL Description Features The UR5HCFJL G reenC oder ™ is a unique, q uasi-zero pow er keyboard e ncod er that provides an optim um
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: mm Axial Diode Single Diode • O U T L IN E D IM E N S IO N S D1ND 600V 1A ■ R A T IN G S A bsolute Maximum R atings m @ !£ - § Symbol Item U W & fS . O perating J u n c tio n Tem perature Average Rectified Forward Current - t ir / u S I - t f " vH H U SSrt
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAV99W DUAL SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Ultra-small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 Dim Min Max A 0.30 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 G 1.20 1.40
|
OCR Scan
|
BAV99W
OT-323
OT-323,
MIL-STD-202,
150mA
DS30045
|
PDF
|
VTE5880
Abstract: No abstract text available
Text: 5bE D • 3D30bDT Daoigsa 431 M V C T GaAIAs Infrared Emitting Diodes VTE5880 T-1 3/4 5 mm Plastic Package — 880 nm T - 4 I - 15 VACTEC _ PACKAGE DIMENSIONS inch (mm) ■OSO (1 2 7 ) .0 3 0 (0 7 $ ) 1 0 0 ( 2 5 .4 ) MINIMUM ' .3 4 ( 8 .6 ) .1 7 ( 4 .3 )
|
OCR Scan
|
VTE5880
VTE5880
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAV99W DUAL SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Ultra-small Surface Mount Package SOT-323 For General Purpose Switching Applications High Conductance Dim Min Max A 0.30 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal -H : h - A X ft I ft
|
OCR Scan
|
BAV99W
OT-323
T-323,
IL-STD-202,
150mA
DS30045
|
PDF
|
BF982
Abstract: Transistor BF982
Text: BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fie ld -e ffe ct transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r V H F applications, such as VHF television tuners, FM tuners, w ith 12 V supply voltage. This MOS-FET te tro de is protected against excessive in p u t voltage surge« b y integrated back-to-back
|
OCR Scan
|
BF982
lD-20/iA
Tamb-25
BF982
Transistor BF982
|
PDF
|
LD-701
Abstract: No abstract text available
Text: Light Emitting Diodes Large flat displays LD-701 Series The LD-701 series w ere designed in •E x te rn a l dimensions Unit: mm response to the n eed for large, flat displays. These are th ree -ch ip , flat displays with high luminance. •F e a tu re s
|
OCR Scan
|
LD-701
LD-701YY
|
PDF
|
diode ITT
Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Text: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark
|
OCR Scan
|
4bfl2711
LL4448
1N4448
4ba2711
diode ITT
1n4448 itt
1N4448
LL4448
QQQ317D
|
PDF
|
ITT DIODE 125
Abstract: ITT diode 103A 400D LL103A LL103B LL103C SD103A LL103
Text: ITT SEniCOND/ INTERNETALL LIE » • 4b62711 0003500 TÔÔ M I S I LL103A . . . LL103C Mark - 3.5*0.!-^ /CIathode 10 o♦1 -Lf> 2 3 0.3±01 Silicon Schottky Barrier Diodes for general purpose applications The LL103A, B, C is a metal on silicon Schottky barrier device
|
OCR Scan
|
LL103A
LL103C
LL103A,
DO-35
SD103A,
LL103
4bfl2711
ITT DIODE 125
ITT diode
103A
400D
LL103A
LL103B
LL103C
SD103A
LL103
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN1D01FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr = 1.6ns (Typ.) Small Total Capacitance
|
OCR Scan
|
HN1D01FU
961001EAA2'
|
PDF
|
1N5401
Abstract: 1N5401+equivalent
Text: INTERNATIONAL RECTIFIER 4855452 SS IN TER N ATIO N A L DE|4flS5452 O O C m Q ì 55C R E C T IF IE R 4 | 04909 D Data Sheet No. PD-2.083 àt-tsr INTERNATIONAL RECTIFIER IÖR 1N54Ü1 SERIES 3 Amp Medium Power Silicon Rectifier Diodes Major Ratings and Characteristics
|
OCR Scan
|
4flS5452
1N5401
125in)
1N5401
1N5401+equivalent
|
PDF
|
CQX15
Abstract: CQX17 ST1331 ST1274
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES • Good optical to mechanical alignment SYM B O L IN C H E S MIN. A M ILLIM ETERS MAX. MIN.
|
OCR Scan
|
CQX15,
CQX17
ST1331
CQX15/17
940nm
ST160
100mA
TA-25
ST1271
ST1276
CQX15
CQX17
ST1331
ST1274
|
PDF
|
|
|
TIP 40c transistor
Abstract: TIP 133 transistor transistor TIP 320 QPD1223 transistor 813 Lf transistor tip 25c transistor tip 40c
Text: En PLASTIC T-1% PAIR OPTOELECTRONICS QPD1223 PACKAGE DIMENSIONS .205 5.21 .185 (4.70) .205 (5.21) .185 (4.70) R EFEREN CE SU RFACE R EFEREN CE SU RFACE .800 (20.3) MIN C O L LE C T O R -.1 0 0 (2.54) NOM .025 (.640) .015 (.380) S Q NOM 2 PLCS .015 (.380)
|
OCR Scan
|
QPD1223
ST2169
QPD1223
TIP 40c transistor
TIP 133 transistor
transistor TIP 320
transistor 813
Lf transistor
tip 25c transistor
tip 40c
|
PDF
|
SB30-03P
Abstract: marking sg n3868
Text: O rd e rin g n u m b e r :EN 3868 SANYO SB30-03P No.3868 Silicon Epitaxial Schottky Barrier Diode i 30V, 3A Rectifier A pplications • High frequency rectification switching regulators, converters, choppers . F eatu res • Low forward voltage (Vp max = 0.55V).
|
OCR Scan
|
SB30-03P
SB30-03P
marking sg
n3868
|
PDF
|
facon diode
Abstract: facon CB-283 703 H 8 amp diode Facon Semiconducteurs CL20-600 3MSb2G3 CL44-703
Text: FACON 45E J> m 3MSb2G3 OOOODSM □ • FCN FACON SEMICONDUCTEURS/SEMICOPJEHJCTORS OI -o I mouldings m o u lag es VRRM Types V RMS re c o m m ended m ax V (V ) ■d on re s is tiv e lo a d s u r c h a rg e r é s is tiv e *d s m / *fsm I r p e r d io d e
|
OCR Scan
|
CB-352
CB-282
3MSb203
-32UMF
CB-283
facon diode
facon
CB-283
703 H
8 amp diode
Facon Semiconducteurs
CL20-600
3MSb2G3
CL44-703
|
PDF
|
DFLZ33
Abstract: zener diode 6.2v 1w DFLZ5V6 DFLZ10
Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ5V1 - DFLZ33 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features • · · 1W Power Dissipation on FR-4 PCB
|
Original
|
DFLZ10
DFLZ11
DFLZ12
DFLZ13
DFLZ15
DFLZ16
DFLZ18
DFLZ20
DFLZ22
DFLZ24
DFLZ33
zener diode 6.2v 1w
DFLZ5V6
|
PDF
|
a1p diode
Abstract: BAW62 SOT23 7Z65148 BAW56 BAW62 12p sot-23 a1p sot
Text: 7110Ä5b DDbß3S7 17T M P H I N BAW56 7 V. SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of two diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.
|
OCR Scan
|
BAW56
a1p diode
BAW62 SOT23
7Z65148
BAW62
12p sot-23
a1p sot
|
PDF
|
ERG75
Abstract: T151 T760 T810 A23G
Text: ERG75 45A : Outline Drawings FAST RECOVERY DIODE Features • t — Pl aner chip • Soft recovery type • Stud mounted : Applications • Switching power supplies • 'f-av't— Free-wheel diode • Others. M axim um Ratings and Characteristics '• Absolute Maximum Ratings
|
OCR Scan
|
ERG75
ERG75
eBTB30Â
EaT05
I95t/R89)
T151
T760
T810
A23G
|
PDF
|
zener diode 6.2v 1w
Abstract: DFLZ6V2 DFLZ10 DFLZ27 cu marking code zener DFLZ36 DFLZ5V1 DFLZ11 DFLZ5V6 DFLZ13
Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features
|
Original
|
DFLZ10
DFLZ11
DFLZ12
DFLZ13
DFLZ15
DFLZ16
DFLZ18
DFLZ20
DFLZ22
DFLZ24
zener diode 6.2v 1w
DFLZ6V2
DFLZ27
cu marking code zener
DFLZ36
DFLZ5V1
DFLZ5V6
|
PDF
|
BK 300 MI
Abstract: WTVA KO-48 ESAC63-004 H125
Text: ESAC63-004 2 oa i'a y h ï- 'O J T m — K SC H O T T K Y B A R R IER DIODE m n & : Features • f&vF Low Vp Super high speed switching. m m & n Connection Diagram High reliability by planer design, : Applications High speed power switching. M aximum Ratings and Characteristics
|
OCR Scan
|
O-22QAB
SC-46
500ns,
BK 300 MI
WTVA
KO-48
ESAC63-004
H125
|
PDF
|
DFLZ10
Abstract: DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24
Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features
|
Original
|
DFLZ10
DFLZ11
DFLZ12
DFLZ13
DFLZ15
DFLZ16
DFLZ18
DFLZ20
DFLZ22
DFLZ24
DFLZ16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics
|
OCR Scan
|
ERE24*
ERE74
I95t/R89)
|
PDF
|
