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    Untitled

    Abstract: No abstract text available
    Text: SEC fiPD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­


    OCR Scan     		PDF fiPD431009 /PD431009 072-word /L/PD431009 36-pin 36-pin, 400-mil jLfPD431009

    IC-3237

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿iPD431009 is packed in 36-pin p la stic SOJ.


    OCR Scan     		PDF uPD431009 128K-WORD PD431009 iPD431009 36-pin Stan-400A 040-ooos /JPD431009. /iPD431009LE: IC-3237

    Untitled

    Abstract: No abstract text available
    Text: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /JPD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­


    OCR Scan     		PDF PD431009 /JPD431009 072-word /L/PD431009 iPD431009 36-pin 36-pin, 400-mil