FCH76N60
Abstract: No abstract text available
Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH76N60N
FCH76N60N
218nC)
FCH76N60
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Untitled
Abstract: No abstract text available
Text: SST-Ribbon Gel-Free Cables Features and Benefits Completely gel-free design No messy filling or flooding compounds eliminate time and labor associated with cleaning ribbons, thereby keeping work and splicing areas cleaner and simplifying splice preparation
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S-87-640
GR-20
PE-90
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Untitled
Abstract: No abstract text available
Text: DCMKP 0.9/20 mF Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 20 000 F Rated DC voltage UNDC 900 V ±5 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-283
31-Jan-11
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Untitled
Abstract: No abstract text available
Text: DCMKP 2.05/3.0 mF/B Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 3000 F Rated DC voltage UNDC 2050 V 0 %/+10 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-242
26-Jan-11
E-006-725
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Untitled
Abstract: No abstract text available
Text: DCMKP 1.1/9.0 mF Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 9000 F Rated DC voltage UNDC 1100 V ± 10 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-197
31-Jan-11
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FCH22N60N
Abstract: FCH22N60 11A 650V MOSFET
Text: SupreMOSTM FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
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FCH22N60N
FCH22N60N
FCH22N60
11A 650V MOSFET
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LP-T50-UP6X3-H1151
Abstract: through the wall ultrasonic Non-Invasive
Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 non-invasive filling level control sensor levelprox
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D-45466
LP-T50-UP6X3-H1151
LP-MS-T50-S
LP-MS-T50-K
LP-T50-UP6X3-H1151
through the wall ultrasonic
Non-Invasive
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bergquist
Abstract: 2500S2
Text: Gap Pad 2500S20 Highly Conformable,Thermally Conductive, Reinforced “S-Class” Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 2500S20 • Thermal conductivity: 2.4 W/m-K PROPERTY Color • Low “S-Class” thermal resistance at
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2500S20
2500S20
bergquist
2500S2
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EBKN7 94v-0
Abstract: EBKN7 ALIVH ml 94v-0 FR4 dielectric constant 4.6 UL 94v-0 board fr4 94v0 ALIVH-G A/EBKN7 94v-0
Text: Printed Wiring Board Japan Taiwan Series: ALIVH Type: ALIVH™ Any Layer IVH structure Multilayer Printed Wiring Board adopts a base material made of nonwoven aramid and interconnects between arbitrary layers by filling the small via hole formed by laser drilling and filled with copper paste.
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Abstract: No abstract text available
Text: Gap Pad 1500S30 Highly Conformable,Thermally Conductive, Reinforced “S-Class” Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500S30 • Thermal conductivity: 1.3 W/m-K PROPERTY Color • Highly conformable / low hardness Reinforcement Carrier
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1500S30
E1269
D2240
1500S30
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a3000
Abstract: No abstract text available
Text: Gap Pad A3000 Thermally Conductive, Reinforced Gap Filling Material Features and Benefits • Thermal conductivity: 2.6 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Reduced tack on one side to aid in application assembly • Electrically isolating
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A3000
E1269
a3000
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Untitled
Abstract: No abstract text available
Text: 1850-1990 MHz 980F105T2E-M 15.8 dBi, Panel Antenna 1850 -1990 MHz l l l l MaxFill Strong filling of lower lobes to increase signal intensity levels in hard to cover areas Excellent upper side lobe suppression, reducing co-channel interference Sturdy construction and 100% factory testing assure years of trouble -free service
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980F105T2E-M
100mph)
DB390
DB5098,
DB5094-AZ
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Untitled
Abstract: No abstract text available
Text: SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH47N60N
FCH47N60N
115nC)
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Untitled
Abstract: No abstract text available
Text: Gap Pad 2500S20 Highly Conformable,Thermally Conductive, Reinforced “S-Class” Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 2500S20 • Thermal conductivity: 2.4 W/m-K PROPERTY Color • Low “S-Class” thermal resistance at
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2500S20
E1269
D2240
2500S20
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C351
Abstract: D149 D150 D2240 D257 D374 D575 D792 ASTM d792 ASTM D2240
Text: Gap Pad 2000S40 Highly Conformable,Thermally Conductive “S-Class” Gap Filling Material Features & Benefits TYPICAL PROPERTIES OF GAP PAD 2000S40 PROPERTY Color • Thermal conductivity = 2.0 W/mK • Low S-Class thermal resistance at very low pressures
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2000S40
C351
D149
D150
D2240
D257
D374
D575
D792
ASTM d792
ASTM D2240
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Untitled
Abstract: No abstract text available
Text: 05/06/2014 www.crouzet.com Level control relay - 35 mm HNE Part number 84870710 Control of one or two levels Filling or emptying function HNM : Control by a resistive level probe HNE : Control by a discrete sensor Part numbers 84870710 Type Sensing Nominal voltage V
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D149
Abstract: D150 D2240 D257 D412 E595
Text: T-flex 600 Series Thermal Gap Filler global solutions : local support ™ T-flexTM 600 Series Thermal Gap Filler Exceptionally soft, highly compressible gap filler T-flex™ 600 is an exceptionally soft, highly compressible gap filling interface pad with a thermal conductivity of 3 W/mK. These
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"Level control relay"
Abstract: AC12 84870700
Text: 84870700 : Level control - Level control relay - 35 mm - HNM Level control - Level control relay - 35 mm - HNM Selling points of the range Control of one or two levels Filling or emptying function HNM: Control by a resistive level probe HNE: Control by a discrete sensor
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Abstract: No abstract text available
Text: Part Number : 1021 Serial Number : WB T5 Lamps Base Wedge Base Base Type W2x4.6d Lamp Size inch T-1 1/2 Lamp size T5 Rating 12V 2W Test Volts (V) 13,5 Current mA 148 Wattage (W) 2 Light Output (Lm) 8 Light output (mscp) 0,64 AC Life 5000 DC Life 5000 Filling
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car sensor ignition
Abstract: cap sensing position sensor reed switch gas sensors NO gas sensor MK18 design of ignition and fuel system
Text: Gas Tank Lid Monitoring Sensor REED RELAYS REED SENSORS REED SWITCHES Introduction In and around the gas tank and its filling lid is consider a highly explosive area. Anything that can possible cause a spark could potentially ignite the fuel. Use of an electromechanical sensor to detect if the lid and fuel cap are in place could
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MK20/1
car sensor ignition
cap sensing
position sensor reed switch
gas sensors
NO gas sensor
MK18
design of ignition and fuel system
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72.01.8.240.0000
Abstract: No abstract text available
Text: 72 SERIES 72 Series - Monitoring relays Features 72.01 72.11 Level control relays for conductive liquids 72.01 - Adjustable sensitivity 72.11 - Fixed sensitivity Emptying or filling functions LED indicator • Reinforced insulation 6 kV - 1.2/50 s between:
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100nF/km.
72.01.8.240.0000
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bottle filling circuit diagram
Abstract: schematic diagram RPM meter bottle filling diagram bottle filling machine bottle filling wiring diagram vishay vt 300 wiring schematic Tedea-Huntleigh by 1330 Tedea-Huntleigh silicone fluid
Text: Model 1430 Vishay Tedea-Huntleigh Damped Load Cells for Rotary Filling Machines FEATURES • Capacities: 3kg, 17lbs, 23lbs • Stainless Steel Construction • Insensitive to rotary dynamic forces • Single Point Performance • Rotary speed to 13rpm at 1m radius
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17lbs,
23lbs
13rpm
08-Apr-05
bottle filling circuit diagram
schematic diagram RPM meter
bottle filling diagram
bottle filling machine
bottle filling wiring diagram
vishay vt 300 wiring schematic
Tedea-Huntleigh by 1330
Tedea-Huntleigh
silicone fluid
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LPRE-T50-UP6X3-H1151
Abstract: Non-Invasive LP-MS-T50-K LP-MS-T50-S turck ultrasonic aisi 316l
Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 non-invasive filling level control sensor levelprox
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D-45466
LPRE-T50-UP6X3-H1151
LP-MS-T50-S
LP-MS-T50-K
LPRE-T50-UP6X3-H1151
Non-Invasive
LP-MS-T50-K
LP-MS-T50-S
turck ultrasonic
aisi 316l
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K-526
Abstract: K548 K542 K528 k526
Text: SERIES OF RF POWER DIVIDERS K-500 VHF. UHF AND 800 MHZ • System Oriented - permits multiple antenna arrays to be designed in the field for key hole patterns, additional gain and shadow-filling. • Easy to Use - allows simple, equal length 50 ohm cable connections to each antenna.
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K-500
K-522
K-542.
K-542
K-526
K-546
K-528
K-548
K548
K542
K528
k526
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