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    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s PDF

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL PDF

    MC4990

    Abstract: 3000 Watt BTL Audio Amplifier MO-187 MO-229 8l marking sd-5 Class AB Audio Power Amplifier CLASS D AUDIO AMPLIFIER 600 ohm
    Text: MC4990 1.25 W Mono Class AB Audio Power Amplifier General Description Features The MC4990 is an audio power amplifier essentially designed for mobile phones and other portable communication devices. It can deliver 1.25 watts of continuous average power to an 8 Ohm BTL load and 2 watts of continuous


    Original     		MC4990 MC4990 MO-229. 3000 Watt BTL Audio Amplifier MO-187 MO-229 8l marking sd-5 Class AB Audio Power Amplifier CLASS D AUDIO AMPLIFIER 600 ohm PDF

    46LR32640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-6BLI 90-ball -40oC 64Mx32 IS46LR32640A-5BLA1 46LR32640A Mobile DDR SDRAM PDF

    46LR16640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit IS43LR16640A-5BL IS43LR16640A-6BL 60-ball -40oC 64Mx16 46LR16640A Mobile DDR SDRAM PDF

    46LR32640A

    Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
    Text: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-5BL IS43LR32640A-6BL 90-ball -40oC 64Mx32 46LR32640A Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A PDF

    46LR16320C

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16320C 16Bits IS43/46LR16320C 16-bit -40oC 32Mx16 IS43LR16320C-5BLI IS43LR16320C-6BLI 60-ball 46LR16320C Mobile DDR SDRAM PDF

    446H

    Abstract: 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821 640-Pin
    Text: 21 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2821 Version 3 February 6, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.


    Original     		IDT82P2821 640-pin BH640) BHG640) 82P2821 446H 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821 PDF

    BF484

    Abstract: IDT82P20516 transformer e19 GR-253-CORE GR-499-CORE 82P20516 chn 347
    Text: 16-Channel Short Haul E1 Line Interface Unit IDT82P20516 Version December 17, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.


    Original     		16-Channel IDT82P20516 484-pin BF484) BFG484) 82P20516 82P20516D BF484 IDT82P20516 transformer e19 GR-253-CORE GR-499-CORE 82P20516 chn 347 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


    Original     		IS43/46LR32200B 32Bits IS43/46LR32200B 32-bit IS43LR32200B-6BLI 90-ball -40oC 2Mx32 PDF

    Untitled

    Abstract: No abstract text available
    Text: I S43LR32160B, I S46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		S43LR32160B, S46LR32160B 32Bits 46LR32160B 32-bit 16Mx32 IS46LR32160B-6BLA1 90-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		S43LR16200C 16Bits IS43LR16200C 2Mx16 IS43LR16200C-6BL 60-ball IS43LR16200C-6BLI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR32800F 32Bits IS43/46LR32800F 32-bit IS43LR32800F-6BLI 90-ball -40oC 8Mx32 IS46LR32800F-6BLA1 PDF

    DS5202

    Abstract: 3.5mm stereo headphone jack 8ohm 0.5W speakers EUA5202 EUA5202QIT1 15W 50 Ohm Resistors EUA5202QIR0 EUA5202QIR1 Figure37 EUA MARKING CODE Speaker - 0.5W 8Ohm
    Text: 芯美电子 EUA5202 2-W Stereo Audio Power Amplifier with Mute DESCRIPTION FEATURES z The EUA5202 is a stereo audio power amplifier that delivering 2W of continuous RMS power per channel into 3-Ω loads. When driving 1W into 8-Ω speakers, the EUA5202 has less than 0.04% THD+N across its


    Original     		EUA5202 800mW/ch TSSOP-24 EUA5202 MO-153 DS5202 3.5mm stereo headphone jack 8ohm 0.5W speakers EUA5202QIT1 15W 50 Ohm Resistors EUA5202QIR0 EUA5202QIR1 Figure37 EUA MARKING CODE Speaker - 0.5W 8Ohm PDF

    K411

    Abstract: No abstract text available
    Text: 16 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2816 Version 1 December 7, 2005 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.


    Original     		IDT82P2816 inf816 416-pin BB416) BBG416) 82P2816 K411 PDF

    82p2816

    Abstract: 15Dh motorola
    Text: 16 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2816 Version August 26, 2005 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc.


    Original     		IDT82P2816 416-pin BB416) BBG416) 82P2816 15Dh motorola PDF

    GD25Q41B

    Abstract: GD25Q41
    Text: GD25Q41B DATASHEET 48 - 1 Rev.1.0 Uniform Sector Dual and Quad Serial Flash GD25Q41B Uniform sector dual and quad serial flash GD25Q41BxIGx Contents 1. FEATURES .4


    Original     		GD25Q41B GD25Q41BxIGx GD25Q41B GD25Q41 PDF

    OAOLP2

    Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
    Text: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.


    Original     		15consecutive OAOLP2 temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR16320C 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		IS43/46LR16320C 16Bits IS43/46LR16320C 16-bit IS43LR16320C-5BLI 60-ball IS43LR16320C-6BLI -40oC 32Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TMP47C660A/860A CMOS 4-BIT MICROCONTROLLER TMP47C660AN,TMP47C860AN TMP47C660AF, TMP47C860AF The 47C660A/860A are high speed and high performance 4-bit single chip micro computers, integrating the 8bit A/D converter based on the TLCS-470 series. PART No.


    OCR Scan     		TMP47C660A/860A TMP47C660AN TMP47C860AN TMP47C660AF, TMP47C860AF 47C660A/860A TLCS-470 TMP47C660AF P47C860AN PDF

    OP12A

    Abstract: No abstract text available
    Text: TOSHIBA TMP47C1260/1660 CMOS 4-BIT MICROCONTROLLER TMP47C1260N, TMP47C1660N TMP47C1260F , TMP47C1660F The 47C1260/1660 are the high speed and high perform ance 4 -b it single chip m icrocom puter, w ith large capacity ROM and RAM, based on the 47C660/860 TLCS-470 series .


    OCR Scan     		TMP47C1260/1660 TMP47C1260N, TMP47C1660N TMP47C1260F TMP47C1660F 47C1260/1660 47C660/860 TLCS-470 TMP47C1260N TMP47C1260F OP12A PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC A/PD70216 V50 16-Bit Microprocessor: High-Integration, CMOS NEC Electronics Inc. Description The /uPD70216 (V50T“) is a high-performance, lowpower 16-bit microprocessor integrating a number of commonly-used peripherals to dramatically reduce the size of microprocessor systems. The CMOS construc­


    OCR Scan     		/PD70216 16-Bit /uPD70216 /L/PD70216 PD70216 juPD70108//vPD70116 y/PD8086//uPD8088 9t30ZQd^ PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,


    OCR Scan     		TC59R7218XB 72-Mbit 600MHz 800MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: i. fü HA5022/883 H A R R IS S E M I C O N D U C T O R Dual 125MHz Video Current Feedback Amplifier with Disable January 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.


    OCR Scan     		HA5022/883 125MHz MIL-STD883 HA5022/883 HA5020. HA-5020 VM700A MIL-STD-883, PDF