300mil-wide trays
Abstract: Q67100-Q2156 Q67100-Q2157
Text: SIEM EN S 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version 60 ns access tim e 104 ns cycle tim e (-60 version)
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32-Bit
324025S/GS-50/-60
324025S/GS-50)
324025S/GS-60)
ModufiE35bD5
L-SIM-72-12
B235b05
300mil-wide trays
Q67100-Q2156
Q67100-Q2157
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PDF
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stm siemens
Abstract: No abstract text available
Text: SIEMENS 1300 nm Laser in Receptacle Package, Medium Power STM 51004X STM 51005X • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring
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51004X
51005X
51004G
1004A
51005G
1005A
Q62702-P3001
Q62702-P3050
Q62702-P3061
Q62702-P3056
stm siemens
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Variable.Capacitance Diode B B 112 • For AM tuning applications • Specified tuning range 1 . .,8 .0 V Type Marking Ordering Code BB 112 — Q62702-B240 Pin Configuration i ^ i - 03 Package1 TO-92 1 O- ^
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Q62702-B240
EHA07002
fiE35bD5
235b05
S35b05
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PDF
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Untitled
Abstract: No abstract text available
Text: PMB 2306R/PMB 2306T SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 O v erv ie w .3 F eatures. 3
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2306R/PMB
2306T
P-DSO-14-1
P-DSO-14-1
35x45'
SSH14X
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration
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BFP182
900MHz
2-F1396
OT-143
2565b
fiE35bD5
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PDF
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SAB-C501
Abstract: No abstract text available
Text: SIEMENS 8-Bit CMOS Microcontroller SAB-C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/20/40 MHz operating frequency 8 K x 8 ROM SAB-C501 -1R only 256 x 8 RAM Four 8-bit ports
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SAB-C501
SAB-C501
16-bit
P-DIP-40
P-LCC-44
SAF-C501
CA01762
SAB-C501-L/C501
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PDF
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PSB4400P
Abstract: PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20
Text: bSE D • ÖSBSbüS Ü Ü S n 2 7 S3S « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Standard Speech Circuit SSC PSB 4400-P;-T Prelim inary Data Bipolar 1C Features • • • • • • • • • • • • Operation down to a DC line voltage of 1.6 V
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GSn27
4400-P
PSB4400P
PSB4400-P
power supply luna siemens
power supply luna 2 siemens
Q67000-A6074
pj 75 sx 34
ITP0449J
ITP04706
P-DIP-18
P-DSO-20
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PDF
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m43of
Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Text: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version
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PEB2091
PEF2091
013751t,
flE35b05
m43of
TAA 761
siemens Package Outlines P-LCC DATE CODE
3535B
aop 741
5MXE
siemens lsl
siemens 58 295 84 pin intel 80
B209
B-209
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PDF
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MIP211
Abstract: LSC series Microcontroller by MOTOROLA 007011 siemens Motorola LSC microcontroller ITP05590 siemens modules GR 60 48 V 120 A dtmfgenerator B2M marking Q67100-H6458 converter siemens modules GR 60 48 V 120 A
Text: SIEMENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2163 Preliminary Data BICMOS-IC 1 • • • • • • • • • • • • • • • • • • • • Features Applications in digital terminal equipment featuring voice
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NET33)
16-bit
100-mW
P-LCC-28-1
fl235fc
MIP211
LSC series Microcontroller by MOTOROLA
007011 siemens
Motorola LSC microcontroller
ITP05590
siemens modules GR 60 48 V 120 A
dtmfgenerator
B2M marking
Q67100-H6458
converter siemens modules GR 60 48 V 120 A
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PDF
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ZO 607 MA 7A 523
Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Text: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!
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BFQ82
BFQ82
Q62702-F1189
AH35b05
00b7Sn
ZO 607 MA 7A 523
cmo 765
transistor zo 607 MA 7S
ZO 607 MA 7A 524
CM 1241 siemens
Ka2 transistor
BFQ 270
ZO 607 transistor
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PDF
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BCW61A
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking
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Q62702-C452
Q62702-C1585
Q62702-C1478
Q62702-C1556
Q62702-C1890
Q62702-C1891
62702-C1482
Q62702-C1586
Q62702-C1554
Q62702-C1654
BCW61A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAS 79 A . BAS 79 D • Switching applications • High breakdown voltage • Common cathode Type BAS BAS BAS BAS 79 79 79 79 A B C D Marking Ordering Code tape and reel BAS BAS BAS BAS Q62702-A914 Q62702-A915 Q62702-A916
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Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
OT-223
D1S03D5
fl53St
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 303 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 C G Pin 3 E Type VCB Package Ordering Code BUP 303 1000V 23A TO-218AB Q67078-A4202-A2 Maximum Ratings
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O-218AB
Q67078-A4202-A2
25arameter:
B235b05
A5023
fl235b0Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Preliminary IC-SPECIFICATION TDA 6060XS, TDA 6060G Multistandard Modulator / PLL gage 1 Contents 2 Functional Description, Application Pin Definition and Function 3 4 Block Diagram Circuit Description 5-10 11 Pinning, Package 12 Absolute Maximum Ratings
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6060XS,
6060G
V66047-S0894-A100-V3-76D4
fl235bDS
A535bQ5
D137L11
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PDF
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Siemens 3SB 180
Abstract: TNC 24 mk 2 Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 siemens FLH 5117800BSJ-50
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • 2 097 152 words by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
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5117800BSJ-50/-60/-70
110ns
235b05
Siemens 3SB 180
TNC 24 mk 2
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
siemens FLH
5117800BSJ-50
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PDF
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TFK 744
Abstract: tfk 731 3tb 50 siemens TFK 602 siemens 3tb 40 MAS 10 RCD SMD MARKING CODE A12 TFK 602 data sheet tfk 623 P-SOJ-32-1
Text: SIEM ENS 8M X 8-Bit Dynamic RAM 4k & 8k-Refresh HYB 3164800AJ/AT(L) -40/-50/-60 HYB 3165800AJ/AT(L) -40/-50/-60 Prelim inary Inform ation • 8 388 608 w ords by 8 -bit organization • 0 to 70 "C operating temperature • Fast Page M ode operation • Performance:
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3164800AJ/AT
3165800AJ/AT
fl23SbDS
800AJ/AT(
235LDS
TFK 744
tfk 731
3tb 50 siemens
TFK 602
siemens 3tb 40
MAS 10 RCD
SMD MARKING CODE A12
TFK 602 data sheet
tfk 623
P-SOJ-32-1
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PDF
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Siemens MMIC
Abstract: CGY180 rohde MMIC SOT 89 marking CODE 1B06 235L Q68000-A8882 DECT siemens T07 marking marking gain stage GaAs MMIC AMPLIFIER
Text: SIEMENS GaAs MMIC CGY 180 Datasheet * * * * * Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 ii, simple output match ESD: Electrostatic discharge sensitive device,
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Q68000-A8882
fl23Sb05
DCHDfa53
Siemens MMIC
CGY180
rohde
MMIC SOT 89 marking CODE
1B06
235L
DECT siemens
T07 marking
marking gain stage GaAs MMIC AMPLIFIER
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 81 Silicon RF Switching Diode • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss 1=C Q62702-A1145 Package CO II O Pin Configuration BBs < Marking Ordering Code BAR 81 II CM Type 4=A MW-4 Maximum Ratings
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Q62702-A1145
fiE35bD5
01E0253
Q12Q5SH
fl235b05
01E0ES5
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Variable Capacitance Diode BB 814 • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and
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Q62702-B404
EHA07004
OT-23
fiE35bD5
D12Q474
EHD07054
E35b05
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PDF
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SmD TRANSISTOR 42T
Abstract: smd 42t
Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100
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O-220
BUZ100
C67078-S1348-A2
6235bDS
SmD TRANSISTOR 42T
smd 42t
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PDF
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