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    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC 4AE D fi3bflb02 0P037bl 576 M S O D ~7~ 33 2 c r cdolitron Devices, Inc. S P E C I F I C A T I O N S ^ . « pn ' d a r l ih b t ON POWER • ^ ‘TRANSISTOR MAXIMUM RATINGS CASE:T0-220 60 Voltage, Collector to Base VCB0) . . • - — - V


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    PDF fi3bflb02 0P037bl T0-220 500mA

    Untitled

    Abstract: No abstract text available
    Text: SOLITRON DEVICES INC 4flE D • fi3bflb02 QGG37flb T48 M S O D j JOLITRON DEVICES PRODUCT SPECIFICATION cu st. + 12 VOLT 2 0°C % REGULATOR to DWG G e n e r a l | + 7 0°C t y p e no 1 si 1 REV. - Purpose T - tt- li- l* CJSE067 NPN Ge PNP TO-3 | CLASS STANDARD [71


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    PDF fi3bflb02 QGG37flb CJSE067

    SDT12301-SDT12303

    Abstract: No abstract text available
    Text: 83686 02 SOL ITRON DEVIC ES INC 95D 02835 D W^fi3bflb02 0002635 fi | re [D yj©ir © äitäil ©( Devices, Inc. HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 12) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


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    PDF fi3bflb02 SDT12301-SDT12303. BUW73, 2N6561, 2N6563 SDT12301-SDT12303