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IXYS Corporation IXFH40N30 MOSFET N-CH 300V 40A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH40N30	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXFH40N30					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IXFH40N30	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TTI	IXFH40N30	Tube			30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFH40N30Q MOSFET N-CH 300V 40A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH40N30Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ComSIT USA	IXFH40N30Q		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFH40N30Q Discmsft Nch Hiperfet-Q Class To-247Ad/Tube \|Littelfuse IXFH40N30Q
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFH40N30Q	Bulk			300	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IXFH40N30Q		180		1	1 - 10 - 100 $11 1000 $10.27 10000 $10.27	Buy Now

FH40N30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
40N30 Abstract: 35n30 FM40N30 IXFH40N30 Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous	Original	35N30 40N30 40N30 35n30 FM40N30 IXFH40N30	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous	Original	35N30 40N30	PDF
FH40N30 Abstract: IXFH40N30 40N30 D-68623 IXFH35N30 IXFM35N30 IXFM40N30 IXYS Corporation FM40N30 IXFH40N30S Text: IXFH35N30 IXFM35N30 VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM35N30 300 V FH40N30 300 V IXFM40N30 300 V FH40N30 IXFM40N30 ID25 RDS on trr 35 A 40 A 40 A 100mΩ 85mΩ 88mΩ 200 ns 200 ns 200 ns	Original	IXFH35N30 IXFM35N30 IXFH/IXFM35N30 IXFH40N30 IXFM40N30 IXFH40N30 IXFM40N30 O-247 35N30 40N30 FH40N30 40N30 D-68623 IXFH35N30 IXFM35N30 IXYS Corporation FM40N30 IXFH40N30S	PDF
IXFH40N30 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM	Original	35N30 40N30 40N30 O-247 100ms IXFH40N30	PDF
1Bt smd Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623 Text: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family	OCR Scan	35N30 40N30 40N30 1Bt smd smd 1bt A1t smd smd diode A1T smd 1bt diode IXFH40N30 diode D83 004 D-68623	PDF
IXFH40N30 Abstract: international rectifier igbt to-247 package Text: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 FH40N30 IXFM40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40	OCR Scan	ixfh35N30 ixfm35N30 IXFH40N30 IXFM40N30 35N30 40N30 international rectifier igbt to-247 package	PDF