FET MODEL Search Results

Curtice

Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Contextual Info: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the

AN569

Abstract: MTP1306
Contextual Info: MOTOROLA Order this document by MTP1306/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 30 VOLTS RDS on = 0.0065 OHM This advanced high–cell density HDTMOS power FET is

AN569

Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high

Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to

bi 370 transistor e

Abstract: bi 370 transistor
Contextual Info: MOTOROLA Order this document by MTP1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information HDTMOS E-FET High Density Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 30 VOLTS RDS on = 22 mQ T his advanced high cell d ensity HDTM OS pow er FET is

ISL6258

Abstract: isl6266a 48v 2.5a charger using uc3842 ISL6726 ISL6258A 40A 48v charger Schematic Diagram uc3842 battery charger schematic schematic diagram 48v ac regulator uc3842 isl6266 24v dc power supply with uc3842
Contextual Info: Intersil Power Management Solutions 2010 Product Selection Guide Inside: Battery Management Digital Power Drivers FET Drivers Hot Plug Controllers Integrated FET Switching Regulators Isolated PWM Controllers LDO / Linear Regulators ORing FET Controllers PMIC

Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP12N06EZL N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = °-180 OHM This advanced TMOS power FET is designed to withstand high

MTP75N03HDL

Abstract: MTP75N03HDL/D
Contextual Info: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET  High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES

ISL6258

Abstract: ISL6258A UC3842 smps design isl6266a schematic diagram 48v ac regulator uc3842 48v 2.5a charger using uc3842 24v dc power supply with uc3842 schematic diagram 48v dc motor speed controller schematic diagram 48v regulator uc3842 uc3842 half bridge
Contextual Info: INTERSIL SELECTION GUIDE POWER MANAGEMENT Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors

ISL95835

Abstract: isl6258 ISL6258A ups circuit schematic diagram 1000w 1000w class d circuit diagram schematics 1000w SMPS CIRCUIT DIAGRAM ISL95831 1000W full bridge regulator 15000w power amplifier circuit diagram SCHEMATIC 12v 1000w smps
Contextual Info: INTERSIL SELECTION GUIDE POWER Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators, LED Drivers ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors

LED interfacing with MSP430

Abstract: MSP-FETP430IF MSP430Fe4xx "Optical Couplers" Connector d-sub 25 pin msp430 motor MSP430Fxxx Optical Couplers SBOS032 311-1142-1-ND
Contextual Info: Application Report SLAA184 –October 2003 MSP430 Isolated FET Interface Andreas Dannenberg MSP430 ABSTRACT This application report describes how to build an isolated FET interface for the MSP430 Flash Emulation Tool FET . When developing and debugging line-powered MSP430

NE70083

Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,

AS4321

Abstract: MGFC45B3436B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic

EVM12

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic

MTP75N06HD

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM

MARKING code VO SMD fet

Abstract: marking cdm smd 2a 3 PIN fet FET Design Catalog
Contextual Info: INTEGRATED CIRCUITS CBT3125 Quadruple FET bus switch Product data File under Integrated Circuits — ICL03 Philips Semiconductors 2001 Dec 12 Philips Semiconductors Product data Quadruple FET bus switch CBT3125 DESCRIPTION PIN CONFIGURATION The CBT3125 quadruple FET bus switch features independent line

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

AN569

Abstract: MTB60N05HDL SMD310
Contextual Info: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N05HDL Motorola Preferred Device TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

AN569

Abstract: MTD20N06HDL SMD310 MTD20N06HDL-D
Contextual Info: MOTOROLA Order this document bt MTD20N06HDL/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD20N06HDL HDTMOS E-FETāā High Density Power FET DPAK for Surface Mount or Insertion Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES

AN569

Abstract: MTB75N03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM

AN569

Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838
Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM

transistor z3m

Abstract: Z3M IC z3m Transistor Z3M Y
Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM

Contextual Info: MOTOROLA Order this document by MTB35N06ZL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB35N06ZL HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 35 AMPERES 60 VOLTS RDS on = 26 mΩ N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W N–Channel Enhancement–Mode Silicon Gate