9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high
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IRF830A
IRF830B
Power247TM,
sss4n60a
IRFS634A
IRFS630A
SSP4N60A
irf640b
SSS7N60A
IRFU210A
SSP7N60A
IRF634B
IRF840A china
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF730 Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilico n Gate T M O S This TMOS Power FET is designed fo r high vo lt age, high speed power sw itching applications such as sw itching regulators, converters, solenoid and
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IRF730
O-220)
GlD273b
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ciss 200v
Abstract: IRFE310
Text: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W
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IRF9140"
IRF9140
IRF9140-JQR-B
IRF9140SMD
IRF9140SMD-JQR-B
O276AB)
1400pF
ciss 200v
IRFE310
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irf840 mosfet drive circuit diagram
Abstract: 7170 MOSFET MIC44XX IRFZ44 mosfet switching circuit IRF510 application note power MOSFET IRF740 driver circuit MOSFET IRF740 as switch irf510 switch power MOSFET IRF610 circuit diagram of mosfet based power supply
Text: Application Note 24 Designing with Low-Side MOSFET Drivers by John McGinty Introduction The proper marriage of a MOSFET driver to a power MOS FET is essential for optimized switch performance. Designing for adequate gate drive, resulting in fast rise and fall times of
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MIC4416
OT-143
IRF7413
MIC4416/17
irf840 mosfet drive circuit diagram
7170 MOSFET
MIC44XX
IRFZ44 mosfet switching circuit
IRF510 application note
power MOSFET IRF740 driver circuit
MOSFET IRF740 as switch
irf510 switch
power MOSFET IRF610
circuit diagram of mosfet based power supply
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IRFBE40
Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800
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IRFK2D054
IRFK2D150
IRFK2D250
IRFK2D350
IRFK2D450
IRFK2DC50
IRFK2DE50
IRFK3D150
IRFK3D250
IRFK3D350
IRFBE40
IRFBG40
MOSFET IRF460
IRLC140
irfc9024
IRFBF40
irlc120
IRLC014
IRFC9034
IRLC034
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Untitled
Abstract: No abstract text available
Text: HI-901 High Voltage MOS Gate Driver General Description Chip Topography The HI-901 is a bootstrap high side driver circuit for controlling N-channel power FETs. The output pin of die driver is alow impedance CMOS buffer which drives the gate of the FET. The output voltage of the
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HI-901
HI-901
222-HOLT
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PIN DIODE DRIVER CIRCUITS
Abstract: No abstract text available
Text: HI-901 High Voltage MOS Gate Driver General Description Chip Topography The HI-901 is a bootstrap high side driver circuit for controlling N-channel power FETs. The output pin of the driver is a low impedance CMOS buffer which drives the gate of the FET. The output voltage of the
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HI-901
HI-901
HI-901P
222-HOLT
PIN DIODE DRIVER CIRCUITS
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SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
SSD2104
irfm014
SSP80N06
IRFU210A
IRFI530A
SSS7N60A
IRFU*230A
sss7n60a 951
SSP2N60A
IRF640A
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irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
irf1740
IRL244
IRF1740A
ks 0550
IRL244A
IRFZ34A
SSH6N80A
IRF634A
irfs750
IRFS640
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power MOSFET IRF740 driver circuit
Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730
Text: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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50V Dual N-Channel HEXFET Power MOSFET in a SO-8
Abstract: IRF7309Q
Text: PD - 96135A IRF7309QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastest processing
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6135A
IRF7309QPbF
EIA-481
EIA-541.
50V Dual N-Channel HEXFET Power MOSFET in a SO-8
IRF7309Q
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EIA-541
Abstract: IRF7101 MS-012AA HE MARKING MOSFET DRIVER
Text: PD - 96135A IRF7309QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastest processing
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6135A
IRF7309QPbF
EIA-481
EIA-541.
EIA-541
IRF7101
MS-012AA
HE MARKING MOSFET DRIVER
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SONY APS 252 power supply
Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
Text: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and
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CDRH6D28-100
MAX1701
100uF
100pF
560pF
NDC632P
QS03L
220uF
SONY APS 252 power supply
8 pin ic 9435A
SONY APS 283
SONY APS 252
IRF 9460
SONY APS 254
SONY APS 283 power supply
transformer 18-0-18
step down transformer 12-0-12
MPSA06 fairchild transistor
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S14539DY
Abstract: in5817-in5822
Text: 19-1245; Rev 0; 7/97 V M X X IV M Adjustable-Output, Switch-Mode Current Sources with Synchronous Rectifier Features ♦ 95% Efficiency ♦ +5.5V to +26V Input Supply Range ♦ 2V to 24V Adjustable-Output Voltage Range ♦ 100% Maximum Duty Cycle Low Dropout
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MAX1640/MAX1641
MAX1640
MAX1641
MAX1640/MAX
MAX1640/M
S14539DY
in5817-in5822
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Untitled
Abstract: No abstract text available
Text: 19- 1245; Rev 0; 7/97 > M / X I A I Adjustable-Output, Switch-Mode Current Sources with Synchronous R ectifier _ Applications Battery-Powered Equipment Laptop, Notebook, and Palmtop Computers Features ♦ 95% Efficiency ♦ +5.5V to +26V Input Supply Range
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500kHz
16-Pin
MAX1641)
MAX1640)
MAX1640EEE
MAX1641
MAX1641EEE
MAX1640C/D
567bb51
MAX1640/MAX1641
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MAX164
Abstract: MAX1640 MAX1640EEE MAX1641 MAX1641EEE IR7309
Text: 19-1245; Rev 0; 7/97 KIT ATION EVALU LE B A IL A AV Adjustable-Output, Switch-Mode Current Sources with Synchronous Rectifier _Applications Battery-Powered Equipment Laptop, Notebook, and Palmtop Computers _Features
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500kHz
16-Pin
MAX1641)
MAX1640)
MAX1640C/D
MAX1640EEE
MAX1641C/D
MAX1641EEE
MAX1640/MAX1641
MAX1640
MAX164
MAX1640EEE
MAX1641
MAX1641EEE
IR7309
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IR7309
Abstract: IN5822 diode IN5822 IN5822 diode replace IR7* IRC MAX164 MAX1640 MAX1640EEE MAX1641 MAX1641EEE
Text: 19-1245; Rev 1; 1/02 KIT ATION EVALU E L B A AVAIL Adjustable-Output, Switch-Mode Current Sources with Synchronous Rectifier _Features The MAX1640/MAX1641 CMOS, adjustable-output, switch-mode current sources operate from a +5.5V to
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MAX1640/MAX1641
MAX1640
MAX1641
MAX1640/MAX1641
IR7309
IN5822 diode
IN5822
IN5822 diode replace
IR7* IRC
MAX164
MAX1640EEE
MAX1641EEE
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IRF470
Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0
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IRF331
O-204AA/TO-3
IRF332
2N6012
O-247
IRFP352R
IRFP353R
IRF470
IRFP240R
IRF840CF
IRF449
IRF340A
irf520 power
IRF341R
IRFP20
irf460 to-247
IRF331R
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IR7309
Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
Text: 19-1245; Rev 2; 5/09 ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?
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MAX1640
MAX1641
MAX1640EEE+
MAX1641C/D
MAX1641EEE+
MAX1640C/D
MAX1641)
MAX1640)
16-Pin
IR7309
EY 85 rectifier
IR-730
IN5822
IN5817
IN5822 diode
MAX1640
MAX1640EEE
MAX1641
MAX1641EEE
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?
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MAX1640
MAX1641
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Malouyans
Abstract: RF830 Spice 2 computer models for hexfets HEXFETs FETs HEXFET SPICE VQE 22 AN-975B
Text: APPLICATIO N NOTE 975B SPICE Computer Models for HEXFET Power MOSFETs HEXFET is a trademark of International Rectifier by S. Malouyans Introduction an accurate m ethod o f representing the variation in C g j. However, this m ust be achieved w ithout m aking excessive
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IRF530
IRF830
AN-975B
Malouyans
RF830
Spice 2 computer models for hexfets
HEXFETs FETs
HEXFET SPICE
VQE 22
AN-975B
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