FET DATA FOR K 5450 Search Results

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

cd 1619 CP AUDIO

Abstract: cd 1691 cp IC cd 1619 CP ic HT 8970 cd 1619 CP of cd 1619 cp ic SL 1626 HT 25-19 5942 nec 8725
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

mq68

Contextual Info: OIXYS VDSS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 200 V 200 V RDS on ^D25 74 A 35 mQ 68 A 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings VOSS Tj = 25 °C to150 °C 200 V V™ Tj = 25°C to 150°C; RGS= 1 .0 M il

NEC k 3654

Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

Contextual Info: □IXYS High Current MegaMOS FET IXTK 74 N20 IXTH 68 N20 V DSS ^D25 200 V 200 V 74 A 68 A D DS on 35 mQ 35 mQ N-Channel Enhancement Mode Preliminary data Symbol Maximum ratings Test conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS=1.0 M£2

nec k 813

Abstract: NE850R599A nec 8725
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

TPS5450-EP

Abstract: 10TPB330M TPS5450 TPS5450MDDAREP
Contextual Info: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

TPS5450-EP

Contextual Info: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

Contextual Info: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

TPS5450QDDARQ1

Abstract: TPS5450-Q1 10TPB330M B540A TPS5450
Contextual Info: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

Contextual Info: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

TPS5450-EP

Abstract: CDRH1127
Contextual Info: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

TPS5450-EP

Abstract: 10TPB330M TPS5450 TPS5450MDDAREP
Contextual Info: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

TPS5450-EP

Abstract: 10TPB330M TPS5450 TPS5450MDDAREP
Contextual Info: TPS5450-EP www.ti.com . SLVS935 – JULY 2009 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

TPS5450-Q1

Abstract: 10TPB330M B540A TPS5450 TPS5450QDDARQ1
Contextual Info: TPS5450-Q1 www.ti.com . SLVS834 – JULY 2008 5-A, WIDE INPUT RANGE, STEP-DOWN SWIFT CONVERTER

FET Data for K 5450

Abstract: 2SK3814 2SK3814-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3814 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3814 TO-251 MP-3