Untitled
Abstract: No abstract text available
Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2025-01
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2SK2025-01
Abstract: No abstract text available
Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2025-01
2SK2025-01
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2SK2003-01M
Abstract: No abstract text available
Text: 2SK2003-01M N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2003-01M
2SK2003-01M
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2SK2003-01MR
Abstract: POWER MOSFET -N-CHANNEL
Text: 2SK2003-01MR N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2003-01MR
2SK2003-01MR
POWER MOSFET -N-CHANNEL
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Untitled
Abstract: No abstract text available
Text: 2SK2003-01MR N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2003-01MR
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2SK2025-01
Abstract: No abstract text available
Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2025-01
2SK2025-01
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2SK2645
Abstract: 2SK2645-01MR 2SK264
Text: 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -
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2SK2645-01MR
2SK2645
2SK2645-01MR
2SK264
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2sk2645
Abstract: No abstract text available
Text: 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -
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2SK2645-01MR
2sk2645
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2SK2760-01
Abstract: No abstract text available
Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2760-01
2SK2760-01
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n-CHANNEL POWER MOSFET 600v
Abstract: 2SK1939-01
Text: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK1939-01
n-CHANNEL POWER MOSFET 600v
2SK1939-01
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Untitled
Abstract: No abstract text available
Text: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2027-01
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2SK1939-01
Abstract: No abstract text available
Text: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK1939-01
2SK1939-01
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2SK2027-01
Abstract: No abstract text available
Text: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2027-01
2SK2027-01
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Untitled
Abstract: No abstract text available
Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2760-01
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2SK2760-01
Abstract: diode 230
Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2760-01
2SK2760-01
diode 230
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2SK2027-01
Abstract: No abstract text available
Text: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2027-01
2SK2027-01
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2SK2215-01L
Abstract: No abstract text available
Text: 2SK2215-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2215-01L
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2SK2760-01
Abstract: No abstract text available
Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2760-01
2SK2760-01
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Untitled
Abstract: No abstract text available
Text: 2SK2215-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2215-01L
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET Low on-resistance RDS on = 0.23 typ. (at ID = 8 A, VGS = 10 V, Ta = 25C) High speed switching
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RJK60S4DPE
R07DS0733EJ0200
PRSS0004AE-B
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • High speed switching
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RJK60S4DPE
R07DS0733EJ0100
PRSS0004AE-B
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2sk2025
Abstract: No abstract text available
Text: FU JI 2SK2025-01 iM iL æ u 'ü c â J i^ FAP-IIA Series N-channel MOS-FET 600V 2,4£2 4A 60W > Outline Drawing > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof
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2SK2025-01
2sk2025
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Untitled
Abstract: No abstract text available
Text: F U JI 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2027-01
Tch-25X5
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T2D 62 diode
Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2645-01MR
O-220F15
T2D 62 diode
T2D 98 DIODE
T2D 70 diode
T2D 27 diode
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