FET 600V 4A Search Results
FET 600V 4A Datasheets Context Search
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Contextual Info: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2025-01 | |
2SK2025-01Contextual Info: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2025-01 2SK2025-01 | |
2SK2003-01MContextual Info: 2SK2003-01M N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2003-01M 2SK2003-01M | |
2SK2003-01MR
Abstract: POWER MOSFET -N-CHANNEL
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2SK2003-01MR 2SK2003-01MR POWER MOSFET -N-CHANNEL | |
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Contextual Info: 2SK2003-01MR N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2003-01MR | |
2SK2025-01Contextual Info: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2025-01 2SK2025-01 | |
2SK2645
Abstract: 2SK2645-01MR 2SK264
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2SK2645-01MR 2SK2645 2SK2645-01MR 2SK264 | |
2sk2645Contextual Info: 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - |
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2SK2645-01MR 2sk2645 | |
2SK2760-01Contextual Info: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators |
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2SK2760-01 2SK2760-01 | |
n-CHANNEL POWER MOSFET 600v
Abstract: 2SK1939-01
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2SK1939-01 n-CHANNEL POWER MOSFET 600v 2SK1939-01 | |
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Contextual Info: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2027-01 | |
2SK1939-01Contextual Info: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK1939-01 2SK1939-01 | |
2SK2027-01Contextual Info: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2027-01 2SK2027-01 | |
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Contextual Info: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators |
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2SK2760-01 | |
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2SK2760-01
Abstract: diode 230
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2SK2760-01 2SK2760-01 diode 230 | |
2SK2027-01Contextual Info: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2027-01 2SK2027-01 | |
2SK2215-01LContextual Info: 2SK2215-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2215-01L | |
2SK2760-01Contextual Info: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators |
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2SK2760-01 2SK2760-01 | |
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Contextual Info: 2SK2215-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2215-01L | |
2sk2025Contextual Info: FU JI 2SK2025-01 iM iL æ u 'ü c â J i^ FAP-IIA Series N-channel MOS-FET 600V 2,4£2 4A 60W > Outline Drawing > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof |
OCR Scan |
2SK2025-01 2sk2025 | |
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Contextual Info: F U JI 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
OCR Scan |
2SK2027-01 Tch-25X5 | |
T2D 62 diode
Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
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OCR Scan |
2SK2645-01MR O-220F15 T2D 62 diode T2D 98 DIODE T2D 70 diode T2D 27 diode | |
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Contextual Info: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET Low on-resistance RDS on = 0.23 typ. (at ID = 8 A, VGS = 10 V, Ta = 25C) High speed switching |
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RJK60S4DPE R07DS0733EJ0200 PRSS0004AE-B | |
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Contextual Info: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • High speed switching |
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RJK60S4DPE R07DS0733EJ0100 PRSS0004AE-B | |