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    FET 600V 4A Search Results

    FET 600V 4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    FET 600V 4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2025-01

    2SK2025-01

    Abstract: No abstract text available
    Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2025-01 2SK2025-01

    2SK2003-01M

    Abstract: No abstract text available
    Text: 2SK2003-01M N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2003-01M 2SK2003-01M

    2SK2003-01MR

    Abstract: POWER MOSFET -N-CHANNEL
    Text: 2SK2003-01MR N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2003-01MR 2SK2003-01MR POWER MOSFET -N-CHANNEL

    Untitled

    Abstract: No abstract text available
    Text: 2SK2003-01MR N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2003-01MR

    2SK2025-01

    Abstract: No abstract text available
    Text: 2SK2025-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 2,4Ω 4A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2025-01 2SK2025-01

    2SK2645

    Abstract: 2SK2645-01MR 2SK264
    Text: 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2645-01MR 2SK2645 2SK2645-01MR 2SK264

    2sk2645

    Abstract: No abstract text available
    Text: 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2645-01MR 2sk2645

    2SK2760-01

    Abstract: No abstract text available
    Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original
    PDF 2SK2760-01 2SK2760-01

    n-CHANNEL POWER MOSFET 600v

    Abstract: 2SK1939-01
    Text: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK1939-01 n-CHANNEL POWER MOSFET 600v 2SK1939-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2027-01

    2SK1939-01

    Abstract: No abstract text available
    Text: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK1939-01 2SK1939-01

    2SK2027-01

    Abstract: No abstract text available
    Text: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2027-01 2SK2027-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original
    PDF 2SK2760-01

    2SK2760-01

    Abstract: diode 230
    Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original
    PDF 2SK2760-01 2SK2760-01 diode 230

    2SK2027-01

    Abstract: No abstract text available
    Text: 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2027-01 2SK2027-01

    2SK2215-01L

    Abstract: No abstract text available
    Text: 2SK2215-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2215-01L

    2SK2760-01

    Abstract: No abstract text available
    Text: 2SK2760-01 N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2Ω 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original
    PDF 2SK2760-01 2SK2760-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2215-01L,S N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original
    PDF 2SK2215-01L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.23  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original
    PDF RJK60S4DPE R07DS0733EJ0200 PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original
    PDF RJK60S4DPE R07DS0733EJ0100 PRSS0004AE-B

    2sk2025

    Abstract: No abstract text available
    Text: FU JI 2SK2025-01 iM iL æ u 'ü c â J i^ FAP-IIA Series N-channel MOS-FET 600V 2,4£2 4A 60W > Outline Drawing > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof


    OCR Scan
    PDF 2SK2025-01 2sk2025

    Untitled

    Abstract: No abstract text available
    Text: F U JI 2SK2027-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan
    PDF 2SK2027-01 Tch-25X5

    T2D 62 diode

    Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
    Text: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan
    PDF 2SK2645-01MR O-220F15 T2D 62 diode T2D 98 DIODE T2D 70 diode T2D 27 diode