Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJK60S4DPE Search Results

    SF Impression Pixel

    RJK60S4DPE Price and Stock

    Rochester Electronics LLC RJK60S4DPE-WS-J3

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJK60S4DPE-WS-J3 Bulk 65
    • 1 -
    • 10 -
    • 100 $4.66
    • 1000 $4.66
    • 10000 $4.66
    Buy Now

    Renesas Electronics Corporation RJK60S4DPE-WS#J3

    RJK60S4DPE-WS#J3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJK60S4DPE-WS#J3 320 67
    • 1 -
    • 10 -
    • 100 $5.6
    • 1000 $5.6
    • 10000 $5.6
    Buy Now
    Rochester Electronics RJK60S4DPE-WS#J3 320 1
    • 1 -
    • 10 -
    • 100 $4.26
    • 1000 $3.81
    • 10000 $3.58
    Buy Now

    RJK60S4DPE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK60S4DPE-00#J3
    Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 16A LDPAK Original PDF

    RJK60S4DPE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.23  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original
    RJK60S4DPE R07DS0733EJ0200 PRSS0004AE-B PDF

    Contextual Info: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original
    RJK60S4DPE R07DS0733EJ0100 PRSS0004AE-B PDF

    R07DS0733EJ0100

    Abstract: 7V10V
    Contextual Info: Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0100 Rev.1.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.23 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • High speed switching


    Original
    RJK60S4DPE R07DS0733EJ0100 PRSS0004AE-B 7V10V PDF

    RJK60S5

    Abstract: r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0
    Contextual Info: High-voltage SJ-MOSFETs New SJ-MOSFETs with Very Low RDS on and Ultra-low Qgd A new line-up of high-voltage SJ-MOSFETs that combine very low RDS(on) and ultra-low Qgd enable switching power supply and motor drive designs that are optimized for both the highest efficiency and compact form


    Original
    O-220, O-247, 0212/100/in-house/LAH/JE RJK60S5 r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0 PDF