Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 Z 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM
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2SK2736
ADE-208-544
220CFM
D-85622
Hitachi DSA00276
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Hitachi DSA002758
Abstract: No abstract text available
Text: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS on = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline 2SK2736 Absolute Maximum Ratings (Ta = 25°C)
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2SK2736
ADE-208-544
Hitachi DSA002758
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tl241
Abstract: No abstract text available
Text: rilCROIilAVE T E C H N O L O G Y bbE ]> • t.l 241 D 0 0000E4A 544 ■MRIilV MwT - 4 m 26 GHz Low Noise GaAs FET m Microwave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX510-651-2208 FEATURES — Isot— • 1.5 dB NOISE FIGURE AT 12 GHZ 3
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0000E4A
FAX510-651-2208
gat70:
tl241
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2SK544
Abstract: mosfet 2sk882 2SK543 2SK882 VDS-10V
Text: 0 SJ^F E T « £ @ • 2SK 543 f i j i t : FM ] « « am i i ' 0 • 2SK 544 VHF ittSfflc, « ft : • 2 S K 8 8 2 * 2 f VHFS iftSfflo ci ^'o ' O 'c Cascode MOS-FET 0 6 7 W 20 Idss (mA) 5 lY fs i(mS) VHF H i ft 4# * 12.00 ».I m * f « ft V d s =10V,V g s =0
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2SK543
100MHz
2SK544
mosfet 2sk882
2SK882
VDS-10V
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FSX017L
Abstract: S12MAG Eudyna Devices X BAND power amplifiers
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
FSX017L
S12MAG
Eudyna Devices X BAND power amplifiers
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Untitled
Abstract: No abstract text available
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
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Fujitsu GaAs FET Amplifier design
Abstract: FLL1500IU-2A FLL1500 Fujitsu GaAs FET Amplifier
Text: FLL1500IU-2A L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 45%. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2A is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2A
FLL1500IU-2A
FCSI0299M200
Fujitsu GaAs FET Amplifier design
FLL1500
Fujitsu GaAs FET Amplifier
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Untitled
Abstract: No abstract text available
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
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fet 544 a
Abstract: MGFC39V6471
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V6471 , o t p ,o d u c « 0 " u 6 . 4 - 7 .2 G H z BAND 8 W IN TERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V6471 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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39V6471
MGFC39V6471
fet 544 a
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Untitled
Abstract: No abstract text available
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general
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FLK107MH-14
FLK102MH-14
FCSI0598M200
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601 121
Abstract: FLL800IQ-2C
Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that
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FLL800IQ-2C
FLL800IQ-2C
601 121
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transistor 1345
Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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FHR02X
18GHz
FHX02X
4-22GHz
FCSI0598M200
transistor 1345
FHR02X
GaAs FET HEMT Chips
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GaAs FET HEMT Chips
Abstract: No abstract text available
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
FCSI0598M200
GaAs FET HEMT Chips
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GaAs FET HEMT Chips
Abstract: No abstract text available
Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)
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FHR02X
18GHz
FHX02X
4-22GHz
FCSI0598M200
GaAs FET HEMT Chips
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Untitled
Abstract: No abstract text available
Text: N AUER PHILT^S/B IS CRETE b'lE T> • bb53R31 0030646 T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power
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bb53R31
BUK582-100A
OT223
Q030AS3
OT223.
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fujitsu hemt
Abstract: No abstract text available
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
FCSI0598M200
fujitsu hemt
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Untitled
Abstract: No abstract text available
Text: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for
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FLK057XV
FLK057XV
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E1411
Abstract: E1411-61601 E1326-61611 E132 E1326 61601 E1407 E1407A E1411-80001 multiplexer 31
Text: Agilent E1407A A/B to C-Size P1/P2 Active Adapter Data sheet • • • • • Adapts A- or B-size VXI to C-size VXI Provides active extensions of P1 and P2 Fits 1-slot or 2-slots optional modules Provides slave-only capability Allows isolation of outer rows of P2
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E1407A
Multiplexer/E1407A
E1407A
5990-5066EN
E1411
E1411-61601
E1326-61611
E132
E1326
61601
E1407
E1411-80001
multiplexer 31
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pt 11400
Abstract: FLM1011-4F
Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-4F
-46dBc
FLM1011-4F
pt 11400
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Untitled
Abstract: No abstract text available
Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-4F
-46dBc
FLM1011-4F
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Untitled
Abstract: No abstract text available
Text: FLL1200IU-2A L-Band Medium & High Power GaAs FETs f u j Ît s u FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2A is a 120 Watt GaAs FET that employs a push-pull design that
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FLL1200IU-2A
FLL1200IU-2A
IMT-2000
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Untitled
Abstract: No abstract text available
Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W
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FLM1011-4F
-46dBc
FLM1011-4F
FCSI0598M200
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HMF-1200
Abstract: HMF12000-200 hmf-12
Text: g 1 HARRIS nu SE MIC ONDUCTOR j HARRIS ^bE » • 43G52b1 0D00221 a « H M S H M F -12020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +27.5 dBm Output Power with 7 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers
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43G52b1
0D00221
F-12020-200
HMF12000-200.
HMF-1200
HMF12000-200
hmf-12
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