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    HMF-1200

    Abstract: HMF12000-200 hmf-12
    Text: g 1 HARRIS nu SE MIC ONDUCTOR j HARRIS ^bE » • 43G52b1 0D00221 a « H M S H M F -12020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +27.5 dBm Output Power with 7 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers


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    43G52b1 0D00221 F-12020-200 HMF12000-200. HMF-1200 HMF12000-200 hmf-12 PDF