Untitled
Abstract: No abstract text available
Text: BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7610-100B
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BUK7510-100B
Abstract: 7610-100B
Text: BUK7510-100B N-channel TrenchMOS standard level FET Rev. 03 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7510-100B
BUK7510-100B
7610-100B
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BUK7610-100B
Abstract: No abstract text available
Text: BUK7610-100B N-channel TrenchMOS standard level FET Rev. 03 — 12 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7610-100B
BUK7610-100B
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Untitled
Abstract: No abstract text available
Text: TO -22 0A B BUK7510-100B N-channel TrenchMOS standard level FET Rev. 4 — 4 January 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7510-100B
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Untitled
Abstract: No abstract text available
Text: TO -22 0A B BUK7510-100B N-channel TrenchMOS standard level FET Rev. 4 — 4 January 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7510-100B
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7610
Abstract: 7610-100B
Text: BUK75/7610-100B TrenchMOS standard level FET Rev. 02 — 19 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK75/7610-100B
BUK7510-100B
O-220AB)
BUK7610-100B
OT404
7610
7610-100B
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Untitled
Abstract: No abstract text available
Text: BUK75/7610-100B TrenchMOS standard level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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BUK75/7610-100B
BUK7510-100B
O-220AB)
BUK7610-100B
OT404
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Untitled
Abstract: No abstract text available
Text: CFK2062-P5 ÊSH9t Product S p ecificatio n s M ay 1996 iof4 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P5
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4318J
Abstract: shab
Text: JCEIEMTEK Product S p ecificatio n s M ay 1996 iof4 Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET
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CFK2062-P1
4318J
shab
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SE 0947
Abstract: FET 3878 0942S application of ic 7474
Text: ICELERiTEK CFK2162-P1 800 to 900 MHz +34 dBm Power GaAs FET Product Specifications M ay 1996 1 o f 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products
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CFK2162-P1
SE 0947
FET 3878
0942S
application of ic 7474
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Untitled
Abstract: No abstract text available
Text: SSiSR Ê TE K Product Specifications M ay 1996 1 of 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P3
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FET 4953
Abstract: EL 431 044 PBA FET CFK2162-P5 CFK2162-P5-000T R15-G IGD 507 an
Text: « i e o i K Product S p ecificatio n s D ecem ber 1997 iof4 2.3 to 2.5 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products
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CFK2162-P5
CFK2162-P5
1T745D3
FET 4953
EL 431 044
PBA FET
CFK2162-P5-000T
R15-G
IGD 507 an
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Untitled
Abstract: No abstract text available
Text: « i f i i m i CFK2162-P3 r Product Specifications D ecem b er 1997 iof4 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products
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OCR Scan
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CFK2162-P3
CFK2162-P3
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2794J
Abstract: AFL SO-8
Text: 5 €SLER!TEK CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET P roduct S p ec ifica tio n s M ay 19 96 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products
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CFK2162-P5
2794J
AFL SO-8
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IGD 507 an
Abstract: No abstract text available
Text: m CDIKV Product S pecificatio n s D ecem ber 1 9 9 7 CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products
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CFK2162-P5
CFK2162-P5
1T745D3
IGD 507 an
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5Bt fet
Abstract: No abstract text available
Text: 'CB U a n T B r Product S pecifications D e cem b er 1 9 9 7 iof4 CFK2062-P5 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P5
CFK2062-P5
5Bt fet
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lambda LDS
Abstract: CFK2062-P1 CFK2062-P1-000T ita27
Text: CFK2062-P1 P ro d u c t S p e c ific a tio n s D ecem ber 1997 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P1
CFK2062-P1
0000b7D
lambda LDS
CFK2062-P1-000T
ita27
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PBA FET
Abstract: CFK2062-P5 CFK2062-P5-000T
Text: s i m B P H m P rod u ct S p e cifica tio n s D ecem b er 1997 iof4 CFK2062-P5 r 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P5
CFK2062-P5
PBA FET
CFK2062-P5-000T
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transistor C5080
Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295
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3SK228
3SK239A
3SK309
3SK186
3SK295
3SK194
BB101M
BB101C
3SK296
2SC2732
transistor C5080
transistor 2SC458
C5247
Transistor 2SA 2SB 2SC 2SD
transistor 2sc1515
2SC1755A
transistor f 20 nf
C5246
A1052
C4965
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Untitled
Abstract: No abstract text available
Text: 9 e SLE B Ê TE K P roduct S p ecificatio n s D e ce m b er 1 9 9 7 1 o f 4 CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P1
CFK2062-P1
30nintended
0000t
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CFK2062-P3
Abstract: CFK2062-P3-000T pt 4115 FET 4953
Text: .fCICDITClf P ro d u c t S p e c ific a tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P3
CFK2062-P3
CFK2062-P3-000T
pt 4115
FET 4953
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Untitled
Abstract: No abstract text available
Text: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
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CFK2062-P3
CFK2062-P3
0000b74
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7474 pin out diagram
Abstract: FET 4953 lm 7223 PBA FET CFK2162-P1 CFK2162-P1-000T k 3878 4953 FET LM 7926
Text: f r a E D i K CFK2162-P1 i r P ro d u c t S p e c ific a tio n s D e c e m b e r 1 9 9 7 1 o f 4 800 to 900 MHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45 % Linear Power Added Efficiency
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CFK2162-P1
CFK2162-P1
00bfl2
7474 pin out diagram
FET 4953
lm 7223
PBA FET
CFK2162-P1-000T
k 3878
4953 FET
LM 7926
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lambda LMS
Abstract: 5B42 CFK2162-P3 CFK2162-P3-000T
Text: « i m w i P ro d u c t S p e c ific a tio n s D ecem ber 1997 iof4 CFK2162-P3 r 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power O utput □ P roprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third O rder Products
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CFK2162-P3
CFK2162-P3
lambda LMS
5B42
CFK2162-P3-000T
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