AS4C256K16F0-60JC
Abstract: ez 948 AS4C256K16F0 LRAL taa 723
Text: WÊ High Performance 256Kxl6 CMOS DRAM AS4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed
|
OCR Scan
|
AS4C256K16F0
256Kxl6
256Kxl6
4C256K16F0-50)
I/014
I/013
I/012
40-pin
AS4C256KI6F0-50JC
AS4C256K16F0-60JC
AS4C256K16F0-60JC
ez 948
AS4C256K16F0
LRAL
taa 723
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • S m artV oltage T echnology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration • H igh-Perform ance Read M axim um Access Tim es — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns
|
OCR Scan
|
16-KB
96-KB
128-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
IS28F002BLVT-120TI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: General Characteristics of Fixed Wirewound Resistors DRALORIC BASIC CONSTRUCTION Wirewound resistors usually consist of a substrate of high grade special ceramic material of high mechanical stability onto which is wound, at constant pitch, a single layer wire or ribbon resistance element.
|
OCR Scan
|
0000b74
0Q00b75
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package
|
OCR Scan
|
CFK2062-P3
CFK2062-P3
0000b74
|
PDF
|