FEB2010 Search Results

Contextual Info: LITE-ON SEMICONDUCTOR DF15005S thru DF1512S REVERSE VOLTAGE - 50 to 1200 Volts FORWARD CURRENT - 1.5 Amperes SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF-S Rating to 1200V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

sb3150

Contextual Info: SB3150 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – – 150 Volts 3.0 Amperes DO-201AD • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability •The plastic material carries UL recognition 94V-0

AON7408

Abstract: Design with PIN diode alpha
Contextual Info: AON7408 30V N-Channel MOSFET General Description Features The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS (V) = 30V ID = 23A (VGS = 10V)

AON7410

Abstract: DFN 3x3 h1010
Contextual Info: AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. VDS (V) = 30V

SSPA ka Band

Abstract: Boeing Skynet Electronic EMC RF Labs Resistor ANIK F1 rover hughes Hybrid Couplers transformation turksat transponder
Contextual Info: Over Thirty Years Florida RF Labs / EMC Technology has been supplying RF Passive Components for space flight missions for over 30 years. We have participated in over 150 military, commercial and scientific satellite programs such as the Mars Exploration Rover. Our capabilities to

AON7212

Contextual Info: AON7212 30V N-Channel MOSFET General Description Product Summary The AON7212 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

Contextual Info: SST2603 -5A, -20V,RDS ON 65mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2603 utilized advanced processing techniques to achieve the lowest 0.37 REF

Contextual Info: VRE3050 VRE3050 duct Innovation From P r oVRE3050 Precision Voltage Reference FEATURES DESCRIPTION The VRE3050 is a low cost, high precision 5 V reference that operates from +10 V. The device features a buried zener for low noise and excellent long term

Liteon ES2D

Contextual Info: LITE-ON SEMICONDUCTOR ES2A thru ES2J REVERSE VOLTAGE - 50 to 600 Volts FORWARD CURRENT - 2.0 Amperes SURFACE MOUNT SUPER FAST RECTIFIERS FEATURES SMB Glass passivated chip Super fast switching for high efficiency For surface mounted applications Low forward voltage drop and high current capability

fp6321

Abstract: driver mosfet fp6321
Contextual Info: FP6321 fitipower integrated technology lnc. Synchronous Buck PWM DC-DC Controller Description Features The FP6321 is designed to drive two N-channel MOSFETs in a synchronous rectified buck topology. It provides the output adjustment, internal soft-start, frequency compensation networks, monitoring and

1092-01a-5

Abstract: 5V712
Contextual Info: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • 28 dBm Output Psat, 26 dBm P1dB, typical. • 35 dBm Output TOI. • 17 dB Typical Gain. • Integrated power detection with 30 dB dynamic range. • High ESD tolerance.