FEAT Search Results

TMPZ84

Abstract: TMPZ84C40
Contextual Info: TO SH IBA TMPZ84C40A/41A/42A/43A/44A TMPZ84C40AP-6 / 41AP-6 / 42AP-6 / 43AF-6 / 44AT-6 TMPZ84C40AM-6 /41AM-6 / 42AM-6 TMPZ84C40AP-8 / 41AP-8 / 42AP-8 TLCS-Z80 SIO: SERIAL INPUT/OUTPUT CONTROLLER 1. GENERAL DESCRIPTION AND FEATURES The TMPZ84C40A SIO/O , TMPZ84C41A (SIO/1), TMPZ84C42A (SIO/2),

Contextual Info: TLE2037, TLE2037A EXCALIBUR LOW -NOISE HIGH-SPEED PRECISION DECOM PENSATED OPERATIONAL AM PLIFIERS D3454, MAY 1990 - REVISED APRIL 1991 available features Outstanding Combination of DC Precision and AC Performance: Gain-Bandwldth Product. . . 80 MHz Typ V

UM5583

Abstract: UM55 SPKP rs 355 integrated circuits 5583H
Contextual Info: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier

7S47

Abstract: TD62308BP N/7S47
Contextual Info: TOSHIBA-, ELECTRONIC D2 TD62308BP TD62308BP D eT| T O T 7547 OQlûTMS ñ | T-52-13-01 BIPOLAR DIGITAL INTEGRATED CIRCUI I SILICON MONOLITHIC LOW INPUT ACTIVE 1.5A DRIVER Unit in nun Features . Output Current. 1.5A Max. . High Sustaining Voltage.

Low Drop Out Regulators

Abstract: 7585C DIL 16
Contextual Info: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic

UC38xx

Abstract: unitrode U-128 BA1610 UC3825 application note UC28xx
Contextual Info: IN TEG R A T ED CIR C UITS U C 1823A ,B /1825A ,B UNITRODE U C 2823A , B /2825A,B U C 3823A ,B /3825A ,B High Speed PWM Controller FEATURES DESC RIPTIO N “Bold Type” Denotes improved or new features • Improved versions of the UC3823/UC3825 PWMs The UC3823A & B and the UC3825A & B family of PWM control ICs are Improved versions of the standard

td62381

Abstract: td62381p
Contextual Info: B IP O L A R DIGITAL IN T EG R A T E D C IR C U IT S IL IC O N M O N O LIT H IC T D62381P T I r i K ^ ^ U w f c W ï l 1 W I D I 8 LOW SATU R A T I O N DRIVER Features . Low Saturation Outputs. V q e s a t = 0 . 9 V Max. . O u t p u t R a t i n g .

M 5110

Abstract: m5110 UM5110
Contextual Info: UD/15110 10 Sec Voice Synthesizer with Serial/Random Trigger Features • a ■ ■ Operating Voltage Range: 2.4V - 5.2V Power supply mode selectable by PWD 10 second voice duration 12 voice sections with serial or random trigger functions ■ The STA/STB can option for stop pulse, busy, or LED

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

Contextual Info: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SK578

Abstract: 2SK57
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

2SD819

Contextual Info: 2SD819 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit In mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0S5.OMAX. FEATURES: eteLOMAX. • High Voltage :V c b q =1500V . Low Saturation Voltage :VcE sat =4V (Typ.) + 0.09 4.0— 0.03 (IC=3A, IB=0.8A) • High Speed

T500mA

Contextual Info: TD62107F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107F DARLINGTON DRIVER WITH ENABLE_ The T D 6 2 1 0 7 F is c omprised of four NPN d a rlington output stages and enable inputs w h i c h can gate the outputs. All o u t p u t s feature integral c lamp diodes for s w i t c h ­

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

thermistor 054

Contextual Info: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max

um3881

Abstract: UM3881BH-01 UM3881BF-01 UM3881B LCD 40 pin um3882 3881B UM3881BF-02 C 1740 s um3881bf
Contextual Info: U M 3881B Dot Matrix LCD Controller and Driver Features • Internal LCD drivers 16 com m on signal drivers 40 segm ent signal drivers can be externally extended to 400 segments using UM3882 ■ Maxim um display dimensions 40 characters * 2 lines or 80 characters * 1 line

Contextual Info: UT54 ACS 153/UT54ACTS153 Radiation-Hardened Quadruple 4 to 1 Multiplexers PINOUTS FEATURES • 16-Pin D IP Top View 1.2n radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QM L Q o r V processes Flexible package

YTFP450

Abstract: SC651
Contextual Info: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :

Contextual Info: ooi7nñ a tî TOSHIBA { DI SC RE TE /OPT O} 9097250 TOSHIBA <DISCRETE/OPTO> 99D 17198 D "F 4 1 -2 / T L R G IO I GaP RED /G R EE N LIGHT EMISSION 4mm DIAMETER I FEATURES S . Ceramic Stem Type ; Milky Lusterless Lens . Low Drive Current, High Intensity Red or Green

TA8655an

Abstract: sine wave inverter using pic sif 96 voltmeter sine wave inverter pic tcw7
Contextual Info: TOSHIBA TA8655AN TENTATIVE Unit: mm 1-CHIP NTSC COLO R T V TA8 65 5AN is an Î1TSC 1-chip IC for color TV featuring the structure of collectively incorporating PIF circuits, SIF circuits, and video/chroma deflection circuits in a compact 64-pin package. P IF C IR C U IT S

Contextual Info: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against