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Abstract: No abstract text available
Text: FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
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FDC6312P
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FDC6312P
Abstract: RCA 467 SSOT-6 CBVK741B019 F63TNR FDC633N FDC6312
Text: FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
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Original
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FDC6312P
FDC6312P
RCA 467
SSOT-6
CBVK741B019
F63TNR
FDC633N
FDC6312
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PDF
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FDS6312P
Abstract: FDC6312P
Text: FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
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Original
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FDC6312P
FDS6312P
FDC6312P
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PDF
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