FDP10 Search Results

FDPF*10N60NZ

Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
Contextual Info: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

FDPF10N50UT

Abstract: fdpf10n50
Contextual Info: UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05 Features Description • RDS on = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transistors are p roduced using Fa irchild’s proprietary, planar stripe,

Contextual Info: FDP100N10 N-Channel PowerTrench MOSFET 100V, 75A, 10mΩ Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: ELECTRONIC VOLUMETRIC FLOWMETERS FDP10 SERIES FDP10 Series $ 330 Basic Model MADE IN USA ߜ Quick Response Time ߜ Attitude Insensitive ߜ Easy Maintenance ߜ Bi-Directional Flow Passage ߜ Volumetric Flow Measurement ߜ Low Pressure Drop ߜ No Long Term Drift

FDP100N10

Contextual Info: FDP100N10 N-Channel PowerTrench tm MOSFET 100V, 75A, 10mΩ Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDPF10N50FT

Contextual Info: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDP100N10

Contextual Info: FDP100N10 N-Channel PowerTrench 100V, 75A, 10mΩ tm MOSFET Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDPF10N60NZ

Abstract: FDPF*10N60NZ FDP10N60NZ FDPF10N60 600v 10A ultra fast recovery diode
Contextual Info: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description • RDS on = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and

Contextual Info: FDP100N10 N-Channel PowerTrench MOSFET 100 V, 75 A, 10 mΩ Features Description • RDS on = 8.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features Description • RDS on = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS

FDP100N10

Contextual Info: FDP100N10 N-Channel PowerTrench MOSFET 100 V, 75 A, 10 mΩ Features Description • RDS on = 8.2 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is producedusing Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

FDPF10N60ZUT

Abstract: mosfet 10a 600v 3M-J20 N-Channel 600V MOSFET
Contextual Info: TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05 Features Description • RDS on = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transistors are p roduced using Fa irchild’s proprietary, planar stripe,

FDPF10N50FT

Abstract: fdpf10n50 FDP10N50F
Contextual Info: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

fdpf10n60

Contextual Info: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: FDP100N10 N-Channel PowerTrench MOSFET 100V, 75A, 10mΩ Features Description • RDS on = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Common rail piezo injector driver

Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Contextual Info: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or

Zener Z 5

Abstract: FX-D1 FX-D1P fx-a1 FX-mr5 FX-M1P FT-V41 FX-A1P FD-H20-M1 transistor WT4
Contextual Info: SERIES Slim Body Digital/Auto/Manual Setting Fiber Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS FX-D1/A1/M1 FX-13 FX-11A Fiber Sensors Simple Operation with Innovative Jog Switch FZ-10 Marked Conforming to EMC Directive CX-20 Simple Operation FX-D1/A1 series Uses an innovative highly operable jog

sunx fx 300

Abstract: FX-101P-Z FT-L80Y FT-V80Y FX-101-CC2 FX-100SERIES FT-WV42 npn transistor w19 D1063 sunx ft-a8
Contextual Info: DIGITAL FIBER SENSOR FX-100SERIES Conforming to EMC Directive Bringing digital fiber sensors closer 01/2007 New possibilities with digital fiber sensors. The FX series is a round 100 for success. Easy to read, multipurpose, and at an economical price. The FX series has been designed to be what customers want it to be.

Contextual Info: 205 FIBER SENSORS Digital Fiber Sensor FX-410 SERIES Related Information •■General terms and conditions. F-17 Glossary of terms / General precautions. P.1359~ / P.1405 ■■Sensor selection guide……………… P.3~ ■■Korea’s S-mark. P.1410

Contextual Info: New Product Communication Unit for Open Network Fiber Sensor Guide Book The digital sensor can be connected directly to the 3 types of open network! Other types of analog input sensors can also be connected! Fiber Sensor Guide Book On sale soon Scattered digital sensors can be centrally managed and set through an open network.

piezo injector driver

Abstract: common rail piezo injector driver FDDS10H04 Common rail injector driver diesel piezo injector crdi driver amplifier common rail injector test COMMON RAIL SOLENOID DIRECT INJECTION common rail injector driver application str g 6551
Contextual Info: Automotive Solutions Discrete Power Products Functional Power Products Video, Imaging, and Display Products Fairchild Semiconductor Automotive Solutions Table of Contents Whether specifying an intelligent ignition control for high performance engine management systems or developing