FDP047 Search Results
FDP047 Price and Stock
onsemi FDP047N08MOSFET N-CH 75V 164A TO220-3 |
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FDP047N08 | Tube | 3,391 | 1 |
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FDP047N08 | Tube | 8 Weeks | 800 |
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FDP047N08 | 3,956 |
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FDP047N08 | 287 | 188 |
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FDP047N08 | Bulk | 800 |
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FDP047N08 |
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FDP047N08 | 287 | 1 |
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FDP047N08 | 800 |
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FDP047N08 | 10 Weeks | 50 |
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FDP047N08 | 28,800 |
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onsemi FDP047N08-F102MOSFET N-CH 75V 164A TO220-3 |
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FDP047N08-F102 | Tube | 3,179 | 1 |
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FDP047N08-F102 | Tube | 7 Weeks | 800 |
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FDP047N08-F102 |
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FDP047N08-F102 | Bulk | 800 |
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FDP047N08-F102 |
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FDP047N08-F102 | 11,497 | 1 |
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FDP047N08-F102 | 15 | 1 |
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FDP047N08-F102 | 800 |
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FDP047N08-F102 | 750 | 8 Weeks | 50 |
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FDP047N08-F102 | 9 Weeks | 50 |
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FDP047N08-F102 | 600 | 1 |
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onsemi FDP047AN08A0MOSFET N-CH 75V 15A TO220-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP047AN08A0 | Tube | 1,081 | 1 |
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FDP047AN08A0 | Tube | 10 Weeks | 50 |
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FDP047AN08A0 | 9 |
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FDP047AN08A0 | 1,600 | 185 |
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FDP047AN08A0 | 1,000 | 10 Weeks | 1 |
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FDP047AN08A0 | Bulk | 50 |
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FDP047AN08A0 |
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FDP047AN08A0 | 1,900 | 1 |
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FDP047AN08A0 | 1 |
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FDP047AN08A0 | 800 |
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FDP047AN08A0 | 10 Weeks | 800 |
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FDP047AN08A0 | 11 Weeks | 50 |
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FDP047AN08A0 | 12 Weeks | 50 |
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onsemi FDP047N10MOSFET N-CH 100V 120A TO220-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP047N10 | Tube | 83 | 1 |
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FDP047N10 | Tube | 13 Weeks | 1,000 |
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FDP047N10 | 4,548 |
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FDP047N10 | 5 | 5 |
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FDP047N10 | 5 | 13 Weeks | 50 |
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FDP047N10 | Bulk | 1,000 |
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FDP047N10 |
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FDP047N10 | 1,000 |
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FDP047N10 | 13 Weeks | 1,000 |
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FDP047N10 | 50 | 14 Weeks | 50 |
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FDP047N10 | 100 | 15 Weeks | 50 |
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FDP047N10 | 170 |
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FDP047N10 | 150 | 1 |
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Rochester Electronics LLC FDP047N08-F10164A, 75V, N-CHANNEL, MOSFET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDP047N08-F10 | Bulk | 103 |
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FDP047 Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FDP047 |
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IC | Original | |||
FDP047AN08 |
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N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7m Ohm | Original | |||
FDP047AN08A0 |
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N-Channel UltraFET Trench MOSFET 75 V, 80 A, 4.7 mohm | Original | |||
FDP047AN08A0 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 80A TO-220AB | Original | |||
FDP047AN08A0_NL |
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75V N-Channel PowerTrench MOSFET | Original | |||
FDP047N08 |
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N-Channel PowerTrench MOSFET 75V, 164A, 4.7m Ohm | Original | |||
FDP047N08-F102 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 75V 164A TO220-3 | Original | |||
FDP047N10 |
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100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail | Original |
FDP047 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDP047AN
Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
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FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 144oC, FDH047AN08A0 FDP047AN FDH047AN08 FDH047AN FDP047 | |
Contextual Info: FDP047N08 tm N-Channel PowerTrench MOSFET 75 V, 164 A, 4.7 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tai- |
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FDP047N08 | |
Contextual Info: FDP047N08 N-Channel PowerTrench MOSFET 75 V, 164 A, 4.7 mΩ Features Description • RDS on = 3.8 mΩ (Typ.) @ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
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FDP047N08 O-220 | |
Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially |
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FDP047N10 FDP047N10 O-220 | |
Contextual Info: FDP047N08 N-Channel PowerTrench tm MOSFET 75V, 164A, 4.7mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) |
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FDP047N08 O-220 FDP047N08 | |
Contextual Info: FDP047N08 tm N-Channel PowerTrench MOSFET 75V, 164A, 4.7mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been espe- • Fast switching speed |
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FDP047N08 FDP047N08 O-220 | |
FDP047AN08A0
Abstract: alternator diode 50a
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FDP047AN08A0 O-220AB FDP047AN08A0 alternator diode 50a | |
fdp047n10Contextual Info: FDP047N10 N-Channel PowerTrench 100 V, 164 A, 4.7 mΩ tm MOSFET Description General Description • RDS on = 3.9 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is producedusing Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored |
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FDP047N10 FDP047N10 | |
FDP047N08
Abstract: n-channel, 75v, 80a
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FDP047N08 O-220 FDP047N08 n-channel, 75v, 80a | |
FDP047AN
Abstract: FDH047AN
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FDP047AN08A0 FDH047AN08A0 O-247 O-220AB FDP047AN FDH047AN | |
Contextual Info: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially |
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FDP047N10 FDP047N10 O-220 | |
Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially |
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FDP047N10 O-220 | |
FDP047N10Contextual Info: FDP047N10 N-Channel PowerTrench tm MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially |
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FDP047N10 O-220 FDP047N10 | |
Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100 V, 164 A, 4.7 mΩ Features Description • RDS on = 3.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
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FDP047N10 | |
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FDP047ANContextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 m Ω Features Applications • R DS ON = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 92 nC (Typ.), VGS = 10V |
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FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 FDH047AN08A0 O-220AB O-262AB O-247 FDP047AN | |
FDP047AN08A0
Abstract: FDH047AN08A0 fairchild s1a diode fdp047an
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FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 O-220AB O-262AB O-247 FDH047AN08A0 fairchild s1a diode fdp047an | |
Contextual Info: FDP047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 mΩ Features Applications • R DS ON = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 92 nC (Typ.), VGS = 10V • Battery Protection Circuit |
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FDP047AN08A0 FDH047AN08A0 O-220 O-247 FDP047AN08A0 | |
Contextual Info: FDP047N08 tm N-Channel PowerTrench MOSFET 75 V, 164 A, 4.7 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tai- |
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FDP047N08 FDP047N08 | |
fdp047an08A0Contextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems |
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FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 | |
FDP047N10Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mΩ Description General Description • RDS on = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially |
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FDP047N10 O-220 FDP047N10 | |
TO262ABContextual Info: FDP047AN08A0 / FDI047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge |
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FDP047AN08A0 FDI047AN08A0 O-220AB O-262AB TO262AB | |
Common rail piezo injector driver
Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
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UCC28950
Abstract: SLUSA16 FDP047AN08A UCD28950 Solar Charge Controller 1kw adele SPA11N60CFD UCC27324 1kw full bridge converter design 90KW
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UCC28950 SLUSA16 UCC28950 SLUSA16 FDP047AN08A UCD28950 Solar Charge Controller 1kw adele SPA11N60CFD UCC27324 1kw full bridge converter design 90KW | |
piezo injector driver
Abstract: common rail piezo injector driver FDDS10H04 Common rail injector driver diesel piezo injector crdi driver amplifier common rail injector test COMMON RAIL SOLENOID DIRECT INJECTION common rail injector driver application str g 6551
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Power247TM, piezo injector driver common rail piezo injector driver FDDS10H04 Common rail injector driver diesel piezo injector crdi driver amplifier common rail injector test COMMON RAIL SOLENOID DIRECT INJECTION common rail injector driver application str g 6551 |