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    FDMS039N08B Search Results

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    FDMS039N08B Price and Stock

    onsemi FDMS039N08B

    MOSFET N-CH 80V 19.4A/100A 8PQFN
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    DigiKey FDMS039N08B Reel 6,000 3,000
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    Avnet Americas FDMS039N08B Reel 0 Weeks, 2 Days 848
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    FDMS039N08B Reel 11 Weeks 3,000
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    FDMS039N08B Reel 11 Weeks 3,000
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    FDMS039N08B Reel 11 Weeks 3,000
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    Mouser Electronics FDMS039N08B 7,759
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    Verical FDMS039N08B 350 295
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    FDMS039N08B 44 6
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    Arrow Electronics FDMS039N08B Cut Strips 44 11 Weeks 1
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    Newark FDMS039N08B Reel 3,000
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    Onlinecomponents.com FDMS039N08B
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    Rochester Electronics FDMS039N08B 350 1
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    TME FDMS039N08B 1
    • 1 $2.11
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    Richardson RFPD FDMS039N08B 3,000
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    Avnet Silica FDMS039N08B 12 Weeks 3,000
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    EBV Elektronik FDMS039N08B 13 Weeks 3,000
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    Flip Electronics FDMS039N08B 8,948
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    Wuhan P&S FDMS039N08B 12,000 1
    • 1 $2.75
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    Fairchild Semiconductor Corporation FDMS039N08B

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    Bristol Electronics FDMS039N08B 2,941
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    ComSIT USA FDMS039N08B 1,750
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    FDMS039N08B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS039N08B Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 19.4A POWER56 Original PDF

    FDMS039N08B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 mΩ Features Description • RDS on = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored


    Original     		FDMS039N08B PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 mΩ Features Description • RDS on = 3.2 mΩ (Typ.)@ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored


    Original     		FDMS039N08B FDMS039N08B PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS039N08B N-Channel PowerTrench MOSFET 80V, 100A, 3.9mΩ Features Description • RDS on = 3.2mΩ (Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDMS039N08B FDMS039N08B PDF