FDMC8622 Search Results
FDMC8622 Price and Stock
onsemi FDMC8622MOSFET N-CH 100V 4A/16A 8MLP |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
FDMC8622 | Cut Tape | 20,071 | 1 |
|
Buy Now | |||||
|
FDMC8622 | Reel | 7 Weeks | 3,000 |
|
Buy Now | |||||
|
FDMC8622 | 14,926 |
|
Buy Now | |||||||
|
FDMC8622 | 3,000 | 3,000 |
|
Buy Now | ||||||
|
FDMC8622 | 3,000 | 7 Weeks | 3,000 |
|
Buy Now | |||||
|
FDMC8622 | Cut Tape | 2,570 | 1 |
|
Buy Now | |||||
|
FDMC8622 |
|
Buy Now | ||||||||
|
FDMC8622 | 431 | 1 |
|
Buy Now | ||||||
|
FDMC8622 | 1 |
|
Get Quote | |||||||
|
FDMC8622 | 3,000 |
|
Buy Now | |||||||
|
|
FDMC8622 | 7 Weeks | 3,000 |
|
Buy Now | ||||||
|
FDMC8622 | 8 Weeks | 3,000 |
|
Buy Now | ||||||
|
FDMC8622 | Cut Tape | 2,890 | 0 Weeks, 1 Days | 1 |
|
Buy Now | ||||
|
FDMC8622 | 9 Weeks | 3,000 |
|
Buy Now | ||||||
onsemi FDMC8622-L701FDMC8622-L701 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
FDMC8622-L701 | Bulk |
|
Buy Now | |||||||
Fairchild Semiconductor Corporation FDMC8622Transistors |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
FDMC8622 | 6,162 |
|
Get Quote | |||||||
|
FDMC8622 | 38,180 |
|
Buy Now | |||||||
FDMC8622 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| FDMC8622 |
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4A POWER33 | Original |
FDMC8622 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FDMC8622
Abstract: C3731
|
Original |
FDMC8622 FDMC8622 C3731 | |
|
Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description ̈ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
Original |
FDMC8622 | |
|
Contextual Info: FDMC8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16 A, 56 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
Original |
FDMC8622 | |
FDMC8622Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m: Features General Description Max rDS on = 56 m: at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
Original |
FDMC8622 FDMC8622 | |
FDMC8622Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
Original |
FDMC8622 FDMC8622 | |
|
Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
Original |
FDMC8622 FDMC8622 25ons | |
|
Contextual Info: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article, |
Original |
WP014 |