FDMC86106LZ Search Results
FDMC86106LZ Price and Stock
onsemi FDMC86106LZ-L701FET 100V 103.0 MOHM MLP33 |
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FDMC86106LZ-L701 | Reel |
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FDMC86106LZ-L701 | Reel | 111 Weeks | 3,000 |
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onsemi FDMC86106LZTrans MOSFET N-CH 100V 3.3A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86106LZ) |
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FDMC86106LZ | Reel | 11 Weeks | 3,000 |
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FDMC86106LZ | 3,263 | 494 |
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FDMC86106LZ | 4,221 | 1 |
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FDMC86106LZ | 11 Weeks | 3,000 |
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FDMC86106LZ | 11 Weeks | 3,000 |
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FDMC86106LZ | 159,000 |
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onsemi FDMC86106LZ-PFDMC86106LZ-P |
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FDMC86106LZ-P | 241,027 | 443 |
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FDMC86106LZ-P | 297,832 | 1 |
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Fairchild Semiconductor Corporation FDMC86106LZMOSFET N-CH 100V 3.3A POWER33 |
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FDMC86106LZ | 3 | 1 |
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FDMC86106LZ | 18,000 |
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FDMC86106LZ Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FDMC86106LZ |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.3A POWER33 | Original |
FDMC86106LZ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process |
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FDMC86106LZ | |
Contextual Info: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process |
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FDMC86106LZ | |
Contextual Info: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process |
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FDMC86106LZ | |
FDMC86106LZ
Abstract: FDMC86106Z
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FDMC86106LZ FDMC86106LZ FDMC86106Z |