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    FDI045N10A_F102 Search Results

    FDI045N10A_F102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    REF102BU
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC -25 to 85 Visit Texas Instruments Buy
    REF102AU/2K5
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC Visit Texas Instruments Buy
    REF102CU/2K5
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC -25 to 85 Visit Texas Instruments Buy
    REF102CU
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC -25 to 85 Visit Texas Instruments Buy
    REF102AUG4
    		Texas Instruments 2.5-ppm/°C drift, 10-V precision voltage reference 8-SOIC Visit Texas Instruments Buy
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    FDI045N10A_F102 Price and Stock

    onsemi FDI045N10A-F102

    MOSFET N-CH 100V 120A I2PAK
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    DigiKey FDI045N10A-F102 Tube 315 1
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    Avnet Americas () FDI045N10A-F102 Tube 1,000 10 Weeks 50
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    Mouser Electronics FDI045N10A-F102 4,000
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    Arrow Electronics FDI045N10A-F102 1,500 10 Weeks 50
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    Quest Components FDI045N10A-F102 57
    • 1 $4.4607
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    Richardson RFPD FDI045N10A-F102 1,000
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    Avnet Silica FDI045N10A-F102 11 Weeks 50
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    FDI045N10A_F102 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDI045N10A_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A I2PAK-3 Original PDF
    FDI045N10A-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 120A I2PAK-3 Original PDF

    FDI045N10A_F102 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A PDF

    FDP045N10A

    Abstract: FDI045N10A_F102
    Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.)@ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has


    Original     		FDP045N10A FDI045N10A FDI045N10A_F102 PDF

    Contextual Info: FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 mΩ Features Description • RDS on = 3.8 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has


    Original     		FDP045N10A FDI045N10A PDF