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    FDD86113LZ Search Results

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    FDD86113LZ Price and Stock

    onsemi FDD86113LZ

    MOSFET N-CH 100V 4.2A/5.5A DPAK
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    DigiKey FDD86113LZ Reel 17,500 2,500
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    Avnet Americas FDD86113LZ Reel 11 Weeks 2,500
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    Mouser Electronics FDD86113LZ 7,631
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    Verical FDD86113LZ 2,500 2,500
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    FDD86113LZ 1,470 649
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    Arrow Electronics FDD86113LZ 2,500 11 Weeks 2,500
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    Newark FDD86113LZ Cut Tape 4,919 1
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    FDD86113LZ Reel 2,500
    • 1 $0.637
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    Future Electronics FDD86113LZ Reel 11 Weeks 2,500
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    Onlinecomponents.com FDD86113LZ
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    Rochester Electronics FDD86113LZ 1,500 1
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    • 100 $0.4831
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    Richardson RFPD FDD86113LZ 2,500
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    Avnet Silica FDD86113LZ 12 Weeks 2,500
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    EBV Elektronik FDD86113LZ 13 Weeks 2,500
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    Fairchild Semiconductor Corporation FDD86113LZ

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    Bristol Electronics FDD86113LZ 1,298
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    Quest Components FDD86113LZ 1,038
    • 1 $1.72
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    • 100 $0.86
    • 1000 $0.688
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    ComSIT USA FDD86113LZ 2,500
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    Vyrian FDD86113LZ 6,719
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    FDD86113LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD86113LZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.2A DPAK-3 Original PDF

    FDD86113LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD86

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original
    FDD86113LZ FDD86113LZ FDD86 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original
    FDD86113LZ PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original
    FDD86113LZ PDF